Design of high power tripler based on on-chip schottky diodes
Received:January 12, 2021  Revised:September 04, 2021  download
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Author NameAffiliationE-mail
WU Zi-Xian School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an 710049 China wuzixianabc@sina.cn 
GUO Cheng School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an 710049 China guocheng@xjtu.edu.cn 
WEN Xiao-Zhu School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an 710049 China  
SONG Xu-Bo Hebei Semiconductor Cooperation China Electronics Technology Group Corporation Shijiazhuang 050051 China  
LIANG Shi-Xiong Hebei Semiconductor Cooperation China Electronics Technology Group Corporation Shijiazhuang 050051 China  
GU Guo-Dong Hebei Semiconductor Cooperation China Electronics Technology Group Corporation Shijiazhuang 050051 China  
ZHANG Li-Sen Hebei Semiconductor Cooperation China Electronics Technology Group Corporation Shijiazhuang 050051 China  
LYU Yuan-Jie Hebei Semiconductor Cooperation China Electronics Technology Group Corporation Shijiazhuang 050051 China  
ZHANG An-Xue School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an 710049 China  
FENG Zhi-Hong Hebei Semiconductor Cooperation China Electronics Technology Group Corporation Shijiazhuang 050051 China  
Abstract:This paper presents a design method of high-power triple frequency multiplier based on on-chip integrated capacitor technology and band-stop filter structure. The DC bias circuits of the tripler was improved by using the on-chip integrated capacitor based on beam lead structure so that the DC feed and RF ground were achieved simultaneously. Also, a more compact structure of the tripler was built and the model accuracy was improved. Then, the bandstop filter was used to replace the traditional stepped impedance lowpass filter to suppress the third harmonic. Hence, the structure of the tripler is further simplified while the performance is improved. A 110 GHz tripler and a 220 GHz tripler were fabricated and measured, respectively. The results show that when the input power is 500 mW, the maximum output power of 110 GHz tripler reaches 140 mW with 30 % peak efficiency. When the input power is 300 mW, the peak efficiency of 220 GHz tripler reaches 15 % and the maximum output power is 45 mW. Performance of two triplers validates the design method.
keywords:tripler  on-chip integrated capacitors  bandstop filter  waveguide matching network
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