1.School of Energy and Environment Science, Yunnan Normal University, Kunming 650092, China;2.State Key Laboratory for SLs and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3.Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;4.National Center for International Research on Green Optoelectronics, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
TN213
Supported by the National Natural Science Foundation of China (61774130, 11474248, 61790581, 51973070), and the Ph.D. Programs Foundation of Ministry of Education of China (20105303120002), National Key Technology Research and Development Program of the Ministry of Science and Technology of China (2018YFA0209101).
WEI Guo-Shuai, HAO Rui-Ting, GUO Jie, MA Xiao-Le, LI Xiao-Ming, LI Yong, CHANG Fa-Ran, ZHUANG Yu, WANG Guo-Wei, XU Ying-Qiang, NIU Zhi-Chuan, WANG Yao. High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves,2021,40(5):595~604
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