High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy
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Affiliation:

1.School of Energy and Environment Science, Yunnan Normal University, Kunming 650092, China;2.State Key Laboratory for SLs and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3.Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;4.National Center for International Research on Green Optoelectronics, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China

Clc Number:

TN213

Fund Project:

Supported by the National Natural Science Foundation of China (61774130, 11474248, 61790581, 51973070), and the Ph.D. Programs Foundation of Ministry of Education of China (20105303120002), National Key Technology Research and Development Program of the Ministry of Science and Technology of China (2018YFA0209101).

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    Abstract:

    In this paper, high quality InAs/InAsSb(Ga-free) type-II superlattice were grown on GaSb substrates by molecular beam epitaxy. The superlattice layers structure consists of 100 periods with 3.8 nm thick InAs layers and 1.4 nm InAs0.66Sb0.34 layers. A specific spike-like defect was found during experiment. The epitaxial layer was characterized and analyzed by high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Fourier transform infrared spectroscopy (FTIR). The results show that the optimized sample is almost zero lattice mismatched, the FWHM of the zeroth order SL peak is 39.3 arcsec, the RMS surface roughness achieves around 1.72? over an area of 10 μm×10 μm. The FTIR absorption spectrum shows a 50% cutoff wavelength of 4.28 μm. And PL spectrum shows that the peak of InAs/InAs0.66Sb0.34 SL is at 4.58 μm. These initial results indicate that the grown InAs/InAsSb SL is stable and reproducible, and thus it is worthy of further investigation.

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WEI Guo-Shuai, HAO Rui-Ting, GUO Jie, MA Xiao-Le, LI Xiao-Ming, LI Yong, CHANG Fa-Ran, ZHUANG Yu, WANG Guo-Wei, XU Ying-Qiang, NIU Zhi-Chuan, WANG Yao. High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves,2021,40(5):595~604

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History
  • Received:September 12,2020
  • Revised:September 06,2021
  • Adopted:March 16,2021
  • Online: September 06,2021
  • Published:
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