High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy
Received:September 12, 2020  Revised:September 06, 2021  download
Citation:
Hits: 7
Download times: 9
Author NameAffiliationE-mail
WEI Guo-Shuai School of Energy and Environment Science Yunnan Normal University Kunming 650092 China guoshir@semi.ac.cn 
HAO Rui-Ting School of Energy and Environment Science Yunnan Normal University Kunming 650092 China ruitinghao@semi.ac.cn 
GUO Jie School of Energy and Environment Science Yunnan Normal University Kunming 650092 China  
MA Xiao-Le School of Energy and Environment Science Yunnan Normal University Kunming 650092 China  
LI Xiao-Ming School of Energy and Environment Science Yunnan Normal University Kunming 650092 China  
LI Yong School of Energy and Environment Science Yunnan Normal University Kunming 650092 China  
CHANG Fa-Ran School of Energy and Environment Science Yunnan Normal University Kunming 650092 China  
ZHUANG Yu School of Energy and Environment Science Yunnan Normal University Kunming 650092 China  
WANG Guo-Wei State Key Laboratory for SLs and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 China 
 
XU Ying-Qiang State Key Laboratory for SLs and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 China 
 
NIU Zhi-Chuan State Key Laboratory for SLs and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 China 
 
WANG Yao National Center for International Research on Green Optoelectronics Guangdong Provincial Key Laboratory of Optical Information Materials and Technology Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China  
Abstract:In this paper, high quality InAs/InAsSb(Ga-free) type-II superlattice were grown on GaSb substrates by molecular beam epitaxy. The superlattice layers structure consists of 100 periods with 3.8 nm thick InAs layers and 1.4 nm InAs0.66Sb0.34 layers. A specific spike-like defect was found during experiment. The epitaxial layer was characterized and analyzed by high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Fourier transform infrared spectroscopy (FTIR). The results show that the optimized sample is almost zero lattice mismatched, the FWHM of the zeroth order SL peak is 39.3 arcsec, the RMS surface roughness achieves around 1.72? over an area of 10 μm×10 μm. The FTIR absorption spectrum shows a 50% cutoff wavelength of 4.28 μm. And PL spectrum shows that the peak of InAs/InAs0.66Sb0.34 SL is at 4.58 μm. These initial results indicate that the grown InAs/InAsSb SL is stable and reproducible, and thus it is worthy of further investigation.
keywords:InAs/InAsSb  superlattice  MBE  Ⅲ-Ⅴ semiconductor materials
View Full Text  HTML  View/Add Comment  Download reader

《Journal of Infrared And Millimeter Waves》