Mid-/Short-Wave dual-band infrared detector based on InAs/GaSb superlattice /GaSb bulk materials
Received:August 22, 2020  Revised:September 04, 2021  download
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Author NameAffiliationE-mail
MA Xiao-Le Yunnan Key Laboratory of Opto-Electronic Information Technology Yunnan Normal University Kunming 650500 China xiaolema@semi.ac.cn 
GUO Jie Yunnan Key Laboratory of Opto-Electronic Information Technology Yunnan Normal University Kunming 650500 China jieggg1020@sina.com 
HAO Rui-Ting Yunnan Key Laboratory of Opto-Electronic Information Technology Yunnan Normal University Kunming 650500 China  
WEI Guo-Shuai Yunnan Key Laboratory of Opto-Electronic Information Technology Yunnan Normal University Kunming 650500 China  
WANG Guo-Wei State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China 
 
XU Ying-Qiang State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China 
 
NIU Zhi-Chuan State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China 
 
Abstract:Using GaSb bulk and InAs/GaSb superlattice as short wave and medium wave infrared absorbing materials respectively, a short/mid dual-band infrared detectors with NIPPIN structure were epitaxial growth and fabricated. HRXRD and AFM tests show the FWHM of zero order peak of InAs/GaSb superlattice and GaSb peak are 17.57 arcsec and 19.15 arcsec, respectively. Surface root mean square roughness RMS is 1.82 under . At 77 K, the maximum product RA of resistance and area of SiO2 passivated device is , the dark current density is , and side wall resistivity is . After anodic sulfuration, the maximum RA of the device is , the dark current density is , and side wall resistivity is . Sulfurization reduces dark current of the device by more than one order of magnitude and increases side wall resistivity by one order of magnitude under the same bias. The spectral response of the sulfurization device was tested, the device has the bais polarity-dependent dual-band detection performance with low crosstalk. The 50% cutoff wavelengths of the short-wave and medium-wave channels are 1.55 and 4.62, respectively. At 1.44 μm, 2.7 μm and 4 μm,the responsivity are 0.415 A/W, 0.435 A/W and 0.337 A/W, respectively.
keywords:InAs/GaSb superlattice  GaSb bulk material  mid-/short-wave dual-band  infrared detector  side wall resistivity  low optical cross-talk
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《Journal of Infrared And Millimeter Waves》