Reducing Voc loss in InGaAsP/InGaAs dual-junction solar cells
Received:April 16, 2020  Revised:January 13, 2021  download
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Author NameAffiliationE-mail
LU Hong-Bo State Key Laboratory of Infrared Physics Shanghai Institute of Technology Physics of the Chinese Academy of Sciences Shanghai 200083 China
State Key Laboratory of Space Power-sources Shanghai Institute of Space Power-sources Shanghai 200245 China
University of Chinese Academy of Sciences Beijing 100049 China 
lhb2139@163.com 
LI Xin-Yi State Key Laboratory of Space Power-sources Shanghai Institute of Space Power-sources Shanghai 200245 China  
LI Ge State Key Laboratory of Space Power-sources Shanghai Institute of Space Power-sources Shanghai 200245 China  
ZHANG Wei State Key Laboratory of Space Power-sources Shanghai Institute of Space Power-sources Shanghai 200245 China  
HU Shu-Hong State Key Laboratory of Infrared Physics Shanghai Institute of Technology Physics of the Chinese Academy of Sciences Shanghai 200083 China  
DAI Ning State Key Laboratory of Infrared Physics Shanghai Institute of Technology Physics of the Chinese Academy of Sciences Shanghai 200083 China  
YANG Gui-Ting State Key Laboratory of Space Power-sources Shanghai Institute of Space Power-sources Shanghai 200245 China  
Abstract:Smaller Voc of 1.0eV/0.75 eV InGaAsP/InGaAs double-junction solar cell(DJSC) than the Voc sum of individual subcells has been observed, and there is little information of the origin of such Voc loss and how to minimize it. In this paper, it is disclosed that the dominant mechanism of minority-carrier transport at back-surface-field(BSF)/base interface of the bottom subcell is thermionic emission, instead of defect-induced recombination, which is in contrast to previous reports. It also shows that both InP and InAlAs cannot prevent the zinc diffusion effectively. In addition, intermixing of major III-V element occurs as a result of increasing thermal treatment. To suppress the above negative effects, an initial novel InP/InAlAs superlattice(SL) BSF layer is then proposed and employed in bottom InGaAs subcell. The Voc of fabricated cells reach 997.5 mV, and a reduction of 30 mV in Voc loss without lost of Jsc, compared with the results of conventional InP BSF configuration, is achieved. It would benefit the overall Voc for further four-junction solar cells.
keywords:Back-surface field  InGaAsP/InGaAs dual-junction  Open-circuit Voltage  Superlattice.
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