High power single and power-combined 100~115GHz Schottky balanced doublers
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Affiliation:

1.Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China;2.Institute of Electronic Engineering, China Academy of Engineering Physics,Mianyang 621900, China;3.School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

Clc Number:

TN771

Fund Project:

Supported by the National Key R&D Program of China Grant (2018YFB1801504) and President Funding of China Academy of Engineering Physics with No. YZJJLX2018009

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    Abstract:

    The research on high power 110GHz single and power-combined frequency doublers based on discrete diodes is presented in this paper. The doubler with a single Schottky diode circuit has a measured peak efficiency of 33% and bandwidth over 13.6%. Meanwhile, two different architectures with two single devices adding in-phase have been utilized to realize the power-combined doublers. The combined doubler features four discrete Schottky diodes with twelve junctions altogether soldered on two 127μm-thick ALN substrates. Both devices have demonstrated output powers more than 200mW with a pumping power over 800mW and are capable of providing more power for higher driven power.

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TIAN Yao-Ling, HUANG Kun, CEN Ji-Na, TANG Chuan-Yun, Lin Chang-Xing, ZHANG Jian. High power single and power-combined 100~115GHz Schottky balanced doublers[J]. Journal of Infrared and Millimeter Waves,2021,40(1):13~18

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History
  • Received:February 27,2020
  • Revised:January 11,2021
  • Adopted:August 10,2020
  • Online: January 06,2021
  • Published: