Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers
Received:February 15, 2020  Revised:November 11, 2020  download
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Author NameAffiliationE-mail
YUAN Ye State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China 
626054165@qq.com 
SU Xiang-Bin State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China 
 
YANG Cheng-ao State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China 
 
ZHANG Yi State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China 
 
SHANG Jin-Ming State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China 
 
XIE Sheng-Wen State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China 
 
ZHANG Yu State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China 
zhangyu@semi.ac.cn 
NI Hai-Qiao State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China 
 
XU Ying-Qiang State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China 
 
NIU Zhi-Chuan State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China
Beijing Academy of Quantum Information Sciences Beijing 100193 China
Laboratory of Solid Quantum Material Center College of Physics and Electronic Engineering Shanxi University Taiyuan 030006 China 
zcniu@semi.ac.cn 
Abstract:GaAs-based 1.3 μm InAs quantum dot laser have been grown by MBE system. Under the optimized InAs quantum dots growth temperature of 520℃, and the methods of Be-doping in the active region are adopted for better device performance. With a ridge width of 100 μm and cavity length of 2 mm, the maximum output power of single facet without coating has reached up to 1008 mW under continuous wave (CW) operation at room temperature, and the threshold current density is 110 A/cm2. The QD lasers can still operate at continuous waves (CW) up to 80℃, and the characteristic temperature below 50℃ is as high as 405 K.
keywords:quantum dot laser  molecular beam epitaxy  characteristics temperature  mid-infrared
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