Spin-orbit coupling and Zeeman effect in an HgCdTe inversion layer with interface microroughness
Received:January 15, 2020  Revised:November 13, 2020  download
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Author NameAffiliationE-mail
Tu Hua-Yao Shanghai Institute of Technical physics, Chinese Academy of SciencesUniversity of Chinese Academy of Sciences thy2013@whu.edu.cn 
Lv Meng Shanghai Institute of Technical physics, Chinese Academy of Sciences  
Zhang Song-Ran Shanghai Institute of Technical physics, Chinese Academy of SciencesSchool of Materials Science and Engineering, University of Shanghai for Science and Technology  
Yu Guo-Lin Shanghai Institute of Technical physics, Chinese Academy of Sciences yug@mail.sitp.ac.cn 
Shanghai Institute of Technical physics, Chinese Academy of Sciences Shanghai Institute of Technical physics, Chinese Academy of Sciences  
Chen Xin Shanghai Institute of Technical physics, Chinese Academy of Sciences  
Dai Ning Shanghai Institute of Technical physics, Chinese Academy of Sciences  
Abstract:The Spin-orbit coupling interaction, Zeeman effect and interface microroughness effect in an HgCdTe inversion layer were investigated by experimental measurement. Theoretical models were used to analyze the weak antilocalization (WAL) at different temperatures and in different in-plane magnetic fields. It is found that both the Zeeman effect and the interface microroughness effect will suppress the WAL. And the interface microroughness effect takes effect by facilitating a weak localization in the normal direction of the two-dimensional electron gas (2DEG) plane. With the increasing magnetic field, the interface microroughness induced WL will be suppressed first and then the WAL will be suppressed by Zeeman effect. What’s more, the analysis of parameters τ?τ_? and |m_r^* g_3^* | indicates that the Zeeman effect’s suppression on WAL is independent ofdoes not depend on temperature.
keywords:HgCdTe, Spin-orbit interaction, Zeeman effect, Interface microroughness effect
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