Research progress of room temperature semiconductor infrared photodetectors
Received:December 31, 2019  Revised:August 26, 2020  download
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Author NameAffiliationE-mail
XIE Tian School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
xiet0106@foxmail.com 
YE Xin-Hui School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
 
XIA Hui State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
LI Ju-Zhu State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Mathematics and Science College, Shanghai Normal University, Shanghai 200234, China 
 
ZHANG Shuai-Jun School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
 
JIANG Xin-Yang State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China 
 
DENG Wei-Jie State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China 
 
WANG Wen-Jing State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Mathematics and Science College, Shanghai Normal University, Shanghai 200234, China 
 
LI Yu-Ying State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
LIU Wei-Wei State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
LI Xiang School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China xiangli@usst.edu.cn 
LI Tian-Xin State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China txli@mail.sitp.ac.cn 
Abstract:Room temperature operation of infrared photon detectors will open up a wider range of applications. This article summarizes the room temperature performance and dark current mechanism of semiconductor devices from near infrared to long wavelength infrared. Different methods to suppress dark current including the design of the interband cascade structure of InAs/GaSb type Ⅱ superlattices and the nonequilibrium operation mode of HgCdTe to suppress the Auger process show unique advantages. These electronic structural designs, combined with the latest progress in subwavelength photonic structures to enhance light coupling and reduce dark current, hold the promise to achieve a high performance infrared imaging chip operating in room temperature in the near future.
keywords:room temperature infrared detection  dark current mechanism  interband cascade  HgCdTe  subwavelength photon structure
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Copyright:《Journal of Infrared And Millimeter Waves》