Diode-end-pumped passively Q-switched Nd:YAP/YVO4 Raman laser at 1.2 μm |
Received:December 30, 2019 Revised:August 02, 2020 download |
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Author Name | Affiliation | E-mail | ZHANG Li | College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China College of Mathematics and Physics, Wenzhou University, Wenzhou 325035, China | zl735564281@163.com | ZHU Hai-Yong | College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China | hyzhu.opt@gmail.com | SUN Ying-Lu | College of Mathematics and Physics, Wenzhou University, Wenzhou 325035, China | | DUAN Yan-Min | College of Mathematics and Physics, Wenzhou University, Wenzhou 325035, China | | QI Zi-Qin | College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China | | RUAN Xiu-Kai | College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China | | CHENG Meng-Yao | College of Mathematics and Physics, Wenzhou University, Wenzhou 325035, China | |
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Abstract:The output characteristics of passively Q-switched YVO4 Raman laser derived by a diode end-pumped Nd:YAP laser at 1080 nm was investigated. A Cr4+:YAG/YAG composite crystal with an initial transmittance of 85% was used as saturable absorber. The first-Stokes wave output power and pulse characteristics based on a-cut YVO4 crystal with the Raman shift of 890 cm-1 were studied. Under an incident pump power of 9.87 W, the average output power of 0.76W and conversion efficiency of 7.7% were obtained for the first-Stokes wave. The pulse repetition frequency rose from 3.7 to 33.5 kHz as the incident pump power increased from threshold to 9.87 W. The pulse width was about 1.5 ns at the maximum incident pump power. Therefore, the corresponding maximum single pulse energy and peak power were 22.8 μJ and 15.2 kW, respectively. |
keywords:passively Q-switched Raman laser YVO4 crystal Cr4+:YAG/YAG composite crystal |
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