The effect of deposition methods on the contact properties between Au/Cd electrodes and (111) CdZnTe wafers
Received:December 16, 2019  Revised:October 12, 2020  download
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Author NameAffiliationE-mail
SHI Hao-Zhi School of Materials Science and Engineering, Shanghai University shihaozhi@shu.edu.cn 
ZHANG Ji-jun School of Materials Science and Engineering, Shanghai University zhangjijun222@shu.edu.cn 
Wang Shu-Lei School of Materials Science and Engineering, Shanghai University  
Wang Zhen-Hui School of Materials Science and Engineering, Shanghai University  
Mu Cheng-Yang School of Materials Science and Engineering, Shanghai University  
Xue Ming-Yan School of Materials Science and Engineering, Shanghai University  
Cao Meng School of Materials Science and Engineering, Shanghai University  
Huang Jian School of Materials Science and Engineering, Shanghai University  
Wang Lin-Jun School of Materials Science and Engineering, Shanghai University  
Xia Yi-Ben School of Materials Science and Engineering, Shanghai University  
Abstract:CdZnTe wafer is an ideal substrate for HgCdTe epitaxial thin films. In order to optimize the electrical contact performance of CdZnTe substrate, the Au/Cd composite electrode was prepared on p-type (111)B CdZnTe wafer (tellurium-rich surface) by vacuum evaporation and magnetron sputtering respectively. By means of contact adhesion test, the adhesion between Au/Cd electrode and CdZnTe substrate was studied. Rutherford Backscattering Spectrometry (RBS) was used to compare the element depth distribution of samples with different deposition methods. The effects of the two preparation processes on the ohmic contact characteristics of Au/Cd composite electrode and CdZnTe substrate were compared through the current-voltage (I-V) test, and the optimum preparation technology of composite electrode was obtained.
keywords:CdZnTe  composite electrode  deposition method  barrier height
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Copyright:《Journal of Infrared And Millimeter Waves》