Graphene/GaAs heterostructure based Millimeter/Terahertz wave photodetector
Received:December 10, 2019  Revised:May 14, 2020  download
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Author NameAffiliationPostcode
XU Kai-Qi Shanghai Normal University, Shanghai 200234, China 200234
XU Huang State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
ZHANG Jia-Zhen State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
WU Xiang-Dong State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
YANG Lu-Han State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
ZHOU Jie State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
LIN Fang-Ting Shanghai Normal University, Shanghai 200234, China 
WANG Lin State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
CHEN Gang State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
Abstract:The low intrinsic absorption and the existence of the inherent defects hamper the monoatomic layer graphene from being a high-performance photoelectric material, which leads to the strategy to form heterostructure by combining graphene with semiconductor materials. In this work, a graphene/GaAs heterostructure based photodetector has been designed and fabricated, in which the two-dimensional electron gas are enhanced to improve the photoresponse ability at the band of sub-millimeter and Terahertz (THz) wave ranging from 20 GHz to 0.12 THz. Under 25 GHz radiation, the responsivity of photodetector at room temperature (RT) reaches 20.6 V?W-1, with the response time of 9.8 μs and the noise equivalent power (NEP) of 3.2×1010 W?Hz-1/2 under a bias of 400 mV. At 0.12 THz, the responsivity is determined to be 4.6 V?W-1, with the response time of 10 μs. And a NEP of 1.4×10-9 W?Hz-1/2 can be achieved under the bias of 400 mV. These results exhibit great application potential for the graphene/GaAs heterostructure based THz photodetectors.
keywords:GaAs-based  HEMT  Graphene  Terahertz  Heterostructure
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