Cathodoluminescence(CL) analysis of ZnSe crystal from 350 nm to 850nm at room temperature
Received:November 01, 2019  Revised:August 20, 2020  download
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Author NameAffiliationE-mail
WANG Reng aKey Laboratory of Infrared Imaging Materials and DetectorsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083 China rwang@mail.sitp.ac.cn 
JIAO Cui-Ling aKey Laboratory of Infrared Imaging Materials and DetectorsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083 China  
LU Ye aKey Laboratory of Infrared Imaging Materials and DetectorsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083 China  
HUO Qin aKey Laboratory of Infrared Imaging Materials and DetectorsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083 China  
QIAO Hui aKey Laboratory of Infrared Imaging Materials and DetectorsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083 China  
LI Xiang-Yang aKey Laboratory of Infrared Imaging Materials and DetectorsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083 China  
Abstract:As-received ZnSe crystal has been examined by cathodoluminescence spectroscopy ranging from 350nm to 850nm at room temperature for internal defects and inclusions. Two cathodoluminescence peaks of 462nm and 453nm were detected,of which the former was identified as intrinsic cathodoluminescence of ZnSe and the latter was caused by the crystal defect. The Zn:Se ratio of 6:4 was found by energy dispersive x-ray spectroscopy(EDS),and the extrinsic cathodoluminescence peak of 453nm was attributed to additional Zn in excess of ZnSe stoichiometry.
keywords:ZnSe crystal  Cathodoluminescence (CL)  Zn inclusion
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