Ion-implanted Si:As blocked impurity band detectors for VLWIR detection
Received:October 05, 2019  Revised:April 17, 2020  download
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Author NameAffiliationE-mail
WANG Chao State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Sciences, Beijing 100049, China 
wangchao@mail.sitp.ac.cn 
LI Ning State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China ningli@mail.sitp.ac.cn 
DAI Ning State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China ndai@mail.sitp.ac.cn 
SHI Wang-Zhou Department of Physics, College of Mathematics and Science, Shanghai Normal University, Shanghai 200234, China  
HU Gu-Jin Department of Physics, College of Mathematics and Science, Shanghai Normal University, Shanghai 200234, China hugj@mail.sitp.ac.cn 
Abstract:An ion-implant technique for fabricating Si:As blocked impurity band detectors for VLWIR detection had been investigated, and the detectors with good photoelectric response performance had been demonstrated by optimizing both the processing condition and the device structural parameters together with material characteristic parameters. At 5 K temperature, with a dc bias voltage of -3.8V, the peak response wavelength of the fabricated devices is 23.8 μm, the blackbody responsivity is 3.7A/W, and the detectivity is 5.3×1013cm?Hz1/2/W at 3.2V, which are comparable to (and even superior to) those reported in literatures. Especially, the device manufacturing process is compatible with that for fabrication of integrated circuit, and the detectors can be integrated with readout circuits on one chip, resulting in a remarkable reduction in produce cost and a significant improvement in the imaging performance.
keywords:blocked impurity band  long-wavelength infrared detectors  Si:As  ion-implant process
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