Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4
Received:September 16, 2019  Revised:January 06, 2020  download
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Author NameAffiliationE-mail
MA Su-Yu Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China 51161213022@stu.ecnu.edu.cn 
MA Chuan-He Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China  
LU Xiao-Shuang Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China  
LI Guo-Shuai Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China  
SUN Lin Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China  
CHEN Ye Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China  
YUE Fang-Yu Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China fyyue@ee.ecnu.edu.cn 
CHU Jun-Hao Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
 
Abstract:The bandedge electronic structure including the optical bandgap, band-tail states, and deep/shallow donor and acceptor levels in Cu2ZnSnS4 semiconductor was analyzed by absorption, photocurrent and photoluminescence spectroscopy, and the theoretical reports. It is revealed that the -related defect in Cu2ZnSnS4 with abundant defect states is one of the key factors affecting the band-edge electronic structure. High concentration of the neutral defect cluster [] can narrow the band gap substantially, while the partially-passivated (ionic) defect cluster [] is the main deep donor defect. A large number of band-tail states are responsible for the obvious red-shift of the bandedge-related photoluminescence transition energy. These detrimental defects related to can be effectively suppressed by properly reducing the Sn content in the copper-poor and zinc-rich growth condition, which also avoids the narrowing of the optical bandgap of the Cu2ZnSnS4 absorption layer.
keywords:bandgap  semiconductor defects  spectroscopy characterization  Cu2ZnSnS4
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