Design of high contrast subwavelength gratings with GaAs-based VCSEL materials
Received:June 21, 2019  Revised:December 17, 2019  download
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Author NameAffiliationE-mail
WANG Feng-Ling National Key Lab of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China wangflling@qq.com 
CHEN Lei National Key Lab of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China  
ZHANG Qiu-Bo National Key Lab of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China  
XU Li National Key Lab of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China  
LI Hui National Key Lab of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China  
WANG Hai-Zhu National Key Lab of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China  
HAO Yong-Qin National Key Lab of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China hyq72081220@aliyun.com 
MA Xiao-Hui National Key Lab of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China  
Abstract:A high-refractive-index contrast subwavelength grating (HCG) for 850 nm GaAs-based VCSELs was designed. The whole structure is based on GaAs material system,including a grating layer, a stress buffer layer designed to alleviate its stress problem and an AlOx low refractive index sub-layer oxidized by AlGaAs or AlAs. The reflection characteristics of the HCG are simulated by Rsoft software, and the effects of different grating parameters on reflection spectrum are analyzed. In particular, the effects of stress buffer layer and low refractive index sub-layer on characteristics of gratings are investigated. The 850 nm TM mode HCG shows a very good reflection characteristic. It has a large reflection bandwidth of up to 91 nm with its reflectivity more than 99.9%, and the ratio with the center wavelength reaches 10.7%. Moreover, its reflectivity for TE mode is ensured to be lower than 90%, showing good polarization selectivity. This HCG can replace P-type distributed Bragg reflectors in VCSEL, providing high reflectivity, wide bandwidth, and good stability.
keywords:vertical cavity surface emitting laser (VCSEL), high-refractive-index contrast grating (HCG), distributed Bragg reflectors (DBRs), gallium arsenide (GaAs)
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Copyright:《Journal of Infrared And Millimeter Waves》