A 3.0 THz detector in 65 nm standard CMOS process
Received:May 08, 2019  Revised:December 17, 2019  download
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Author NameAffiliationE-mail
FANG Tong State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
15501266520@163.com 
LIU Li-Yuan State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
liuly@semi.ac.cn 
LIU Zhao-Yang State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
FENG Peng State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
LI Yuan-Yuan Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
LIU Jun-Qi Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
LIU Jian State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
WU Nan-Jian State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
Abstract:A 3.0 THz detector based on plasma-wave theory proposed by Dyakonov and Shur was designed and fabricated in 65 nm standard CMOS process, the detector consists of a patch antenna, a NMOS field effect transistor, a matching network, and a notch filter, it can achieve a room-temperature responsivity (Rv) of 526 V/W and a noise equivalent power (NEP) of 73 pW/Hz1/2. The terahertz scanning imaging system was built with the detector and stepper motor, and the far-field shape of the terahertz source beam was obtained, the full width at half maximum (FWHM) of the beam is 240 μm; and the image of the polyformaldehyde toothpick and tree leaf were obtained through the scanning imaging system, it shows that CMOS terahertz detectors have potential applications in the imaging field.
keywords:CMOS  THz  terahertz imaging  terahertz detector
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Copyright:《Journal of Infrared And Millimeter Waves》