A 3.0 THz detector in 65 nm standard CMOS process
Author:
Affiliation:

1.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Clc Number:

TN386.1

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    A 3.0 THz detector based on plasma-wave theory proposed by Dyakonov and Shur was designed and fabricated in 65 nm standard CMOS process, the detector consists of a patch antenna, a NMOS field effect transistor, a matching network, and a notch filter, it can achieve a room-temperature responsivity (Rv) of 526 V/W and a noise equivalent power (NEP) of 73 pW/Hz1/2. The terahertz scanning imaging system was built with the detector and stepper motor, and the far-field shape of the terahertz source beam was obtained, the full width at half maximum (FWHM) of the beam is 240 μm; and the image of the polyformaldehyde toothpick and tree leaf were obtained through the scanning imaging system, it shows that CMOS terahertz detectors have potential applications in the imaging field.

    Reference
    Related
    Cited by
Get Citation

FANG Tong, LIU Li-Yuan, LIU Zhao-Yang, FENG Peng, LI Yuan-Yuan, LIU Jun-Qi, LIU Jian, WU Nan-Jian. A 3.0 THz detector in 65 nm standard CMOS process[J]. Journal of Infrared and Millimeter Waves,2020,39(1):56~64

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:May 08,2019
  • Revised:December 17,2019
  • Adopted:August 22,2019
  • Online: January 07,2020
  • Published: