Effects of InGaAs/InP interface control on the electrical and optical properties of InGaAs films
Received:April 17, 2019  Revised:November 19, 2019  download
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Author NameAffiliationPostcode
ZHENG Wen-Long School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
200083
ZHANG Ya-Guang State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
GU Yi  
LI Bao-Bao School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
CHEN Ze-Zhong School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China 
CHEN Ping-Ping State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
Abstract:The effects of interfacial diffusion of InGaAs/InP heterojunction on the electrical and optical properties of InGaAs epitaxial films grown by all-solid source molecular beam epitaxy (MBE) are investigated. The InGaAs thin films are studied by X-ray diffraction, variable temperature Hall and photoluminescence (PL) measurements. It is found that inserting a layer of InGaAs transition layer grown by As4 between InGaAs/InP interface can significantly improve the electrical properties of the InGaAs epitaxial film (grown by As2), and its low temperature mobility is significantly improved. At the same time, the abnormal blue shift of the PL peak disappears with the improvement of InGaAs optical properties. The research shows that the growth of InGaAs transition layer by As4 can significantly reduce the abnormal diffusion of As in InP and obtain a sharp InGaAs/InP interface, thus improving the electrical and optical properties of InGaAs films.
keywords:InGaAs/InP  interface control  mobility  photoluminescence
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