1.School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;3.State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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National Natural Science Foundation of China 11634009;Natural Science Foundation of Shanghai 18ZR1445700Supported by National Natural Science Foundation of China (11634009),Natural Science Foundation of Shanghai (18ZR1445700)
ZHENG Wen-Long, ZHANG Ya-Guang, GU Yi, LI Bao-Bao, CHEN Ze-Zhong, CHEN Ping-Ping. Effects of InGaAs/InP interface control on the electrical and optical properties of InGaAs films[J]. Journal of Infrared and Millimeter Waves,2019,38(6):751~757
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