Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays
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Affiliation:

1.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2.University of Chinese Academy of Science, Beijing 100049, China

Clc Number:

TN304.2;TN305

Fund Project:

the National Key Research and Development Program of China 2016YFB0402403;National Natural Science Foundation of China (NSFC 61974152;61904183, 61534006, 61505237, 61505235), and the Youth Innovation Promotion Association 2016219Supported by the National Key Research and Development Program of China (2016YFB0402403), National Natural Science Foundation of China (NSFC 61974152, 61904183, 61534006, 61505237, 61505235), and the Youth Innovation Promotion Association(2016219)

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    Abstract:

    Mid-wavelength infrared interband cascade photodetectors (ICIP) for high operation temperature applications were designed and grown in molecular beam epitaxy (MBE) system. Clear optical response was measured even at a temperature of 323 K, and the dark current density was 4×10-5 A/cm-2 at 140 K for single element device. Based on great material quality of the two-stage ICIP, 320×256 focal plane arrays (FPA) were demonstrated using dry etching. The FPA has a quantum efficiency of 30% from 80 K to 120 K. At 127 K, the device has a noise equivalent temperature difference (NETD) of 55.1 mK and dead pixel rate of 2.3%. Clear infrared images have been taken for a room temperature target with the focal plane arrays at 127 K.

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ZHOU Yi, CHAI Xu-Liang, TIAN Yuan, XU Zhi-Cheng, HUANG Min, XU Jia-Jia, HUANG Ai-Bo, BAI Zhi-Zhong, CHEN Hong-Lei, DING Rui-Jun, CHEN Jian-Xin, HE Li. Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays[J]. Journal of Infrared and Millimeter Waves,2019,38(6):745~750

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History
  • Received:April 15,2019
  • Revised:November 19,2019
  • Adopted:May 17,2019
  • Online: December 17,2019
  • Published: