Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays
Received:April 15, 2019  Revised:November 19, 2019  download
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Author NameAffiliation
ZHOU Yi  
CHAI Xu-Liang Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Science, Beijing 100049, China 
TIAN Yuan  
XU Zhi-Cheng Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
HUANG Min  
XU Jia-Jia Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
HUANG Ai-Bo Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
BAI Zhi-Zhong Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
CHEN Hong-Lei Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
DING Rui-Jun Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
CHEN Jian-Xin Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
HE Li  
Abstract:Mid-wavelength infrared interband cascade photodetectors (ICIP) for high operation temperature applications were designed and grown in molecular beam epitaxy (MBE) system. Clear optical response was measured even at a temperature of 323 K, and the dark current density was 4×10-5 A/cm-2 at 140 K for single element device. Based on great material quality of the two-stage ICIP, 320×256 focal plane arrays (FPA) were demonstrated using dry etching. The FPA has a quantum efficiency of 30% from 80 K to 120 K. At 127 K, the device has a noise equivalent temperature difference (NETD) of 55.1 mK and dead pixel rate of 2.3%. Clear infrared images have been taken for a room temperature target with the focal plane arrays at 127 K.
keywords:photoelectric detector  infrared focal plane arrays  interband cascade structure  high operation temperature
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