Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays |
Received:April 15, 2019 Revised:November 19, 2019 download |
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Author Name | Affiliation | ZHOU Yi | | CHAI Xu-Liang | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China University of Chinese Academy of Science, Beijing 100049, China | TIAN Yuan | | XU Zhi-Cheng | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | HUANG Min | | XU Jia-Jia | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | HUANG Ai-Bo | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | BAI Zhi-Zhong | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | CHEN Hong-Lei | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | DING Rui-Jun | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | CHEN Jian-Xin | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | HE Li | |
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Abstract:Mid-wavelength infrared interband cascade photodetectors (ICIP) for high operation temperature applications were designed and grown in molecular beam epitaxy (MBE) system. Clear optical response was measured even at a temperature of 323 K, and the dark current density was 4×10-5 A/cm-2 at 140 K for single element device. Based on great material quality of the two-stage ICIP, 320×256 focal plane arrays (FPA) were demonstrated using dry etching. The FPA has a quantum efficiency of 30% from 80 K to 120 K. At 127 K, the device has a noise equivalent temperature difference (NETD) of 55.1 mK and dead pixel rate of 2.3%. Clear infrared images have been taken for a room temperature target with the focal plane arrays at 127 K. |
keywords:photoelectric detector infrared focal plane arrays interband cascade structure high operation temperature |
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