| Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays |
| Received:April 15, 2019 Revised:November 19, 2019 download |
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| Author Name | Affiliation | | ZHOU Yi | | | CHAI Xu-Liang | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Science, Beijing 100049, China | | TIAN Yuan | | | XU Zhi-Cheng | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | | HUANG Min | | | XU Jia-Jia | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | | HUANG Ai-Bo | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | | BAI Zhi-Zhong | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | | CHEN Hong-Lei | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | | DING Rui-Jun | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | | CHEN Jian-Xin | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | | HE Li | |
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| Abstract:Mid-wavelength infrared interband cascade photodetectors （ICIP） for high operation temperature applications were designed and grown in molecular beam epitaxy （MBE） system. Clear optical response was measured even at a temperature of 323 K, and the dark current density was 4×10-5 A/cm-2 at 140 K for single element device. Based on great material quality of the two-stage ICIP, 320×256 focal plane arrays （FPA） were demonstrated using dry etching. The FPA has a quantum efficiency of 30% from 80 K to 120 K. At 127 K, the device has a noise equivalent temperature difference （NETD） of 55.1 mK and dead pixel rate of 2.3%. Clear infrared images have been taken for a room temperature target with the focal plane arrays at 127 K. |
| keywords:photoelectric detector infrared focal plane arrays interband cascade structure high operation temperature |
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