Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal
Received:March 19, 2019  Revised:July 07, 2019  download
Citation:
Hits: 5
Download times: 0
Author NameAffiliationE-mail
QIN Lu State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 101408, China 
qinlu@semi.ac.cn 
XU Bo Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 101408, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 
 
XU Xing-Sheng State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 101408, China 
xsxu@semi.ac.cn 
Abstract:In this study, the photoluminescence spectra of InAs/GaAs quantum dots material with photonic crystals were investigated by laser diode excitation. The photonic crystals were fabricated in the material of InAs/GaAs quantum dots by laser holography and wet etching method. It was found that the spectra from quantum dots with photonic crystals appeared multi-peak structure; the enhancement and modification to the short-wavelength component were more pronounced than those to the long-wavelength components. The photoluminescence from InAs/GaAs quantum dots was modified by photonic crystals, and the emission from excited states was significantly enhanced.
keywords:quantum dots  photonic crystal  laser holography  photoluminescence spectra
View Full Text  HTML  View/Add Comment  Download reader

Copyright:《Journal of Infrared And Millimeter Waves》