Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal

doi:10.11972/j.issn.1001-9014.2019.05.003

Home > Archive>Volume 38, Issue 5, 2019 >559-565. DOI:10.11972/j.issn.1001-9014.2019.05.003

Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal
DOI:
                        10.11972/j.issn.1001-9014.2019.05.003
                    
Author:
                        
                        
                    
Affiliation:1.State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 101408, China;3.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Clc Number:O43
Fund Project:National Key Research and Development Program of China 2016YFA0301200 D171100004817002;the National Natural Science Foundation of China 61575191 61627820 61875252Supported by National Key Research and Development Program of China （2016YFA0301200）, the Beijing Science and Technology Project no.D171100004817002, and the National Natural Science Foundation of China （61575191, 61627820, 61875252）

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Abstract:

In this study, the photoluminescence spectra of InAs/GaAs quantum dots material with photonic crystals were investigated by laser diode excitation. The photonic crystals were fabricated in the material of InAs/GaAs quantum dots by laser holography and wet etching method. It was found that the spectra from quantum dots with photonic crystals appeared multi-peak structure; the enhancement and modification to the short-wavelength component were more pronounced than those to the long-wavelength components. The photoluminescence from InAs/GaAs quantum dots was modified by photonic crystals, and the emission from excited states was significantly enhanced.

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QIN Lu, XU Bo, XU Xing-Sheng. Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal[J]. Journal of Infrared and Millimeter Waves,2019,38(5):559~565

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Received:March 19,2019
Revised:July 07,2019
Adopted:May 05,2019
Online: August 31,2019
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