The influence of sulfide passivation on optical properties of InAs nanowires
Received:March 18, 2019  Revised:July 02, 2019  download
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Author NameAffiliationE-mail
LI Bao-Bao School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China bbli6913@163.com 
LI Sheng-Juan School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China  
CHEN Gang State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
LI Shi-Min State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
WANG Xing-Jun State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
Abstract:To solve the problem of low luminescence efficiency caused by the surface oxidation of InAs nanowires, C18H38S and (NH4)2S were adopted to passivate zinc blende (ZB) InAs nanowires synthesized by chemical vapor deposition (CVD). Photoluminescence (PL) spectra of (before and after sulfide passivation) InAs nanowires were performed. The experimental results show that the PL emission efficiency of C18H38S and (NH4)2S passivated InAs nanowires are ~ 6 times and ~ 7 times higher than that of unpassivated InAs nanowires at 25 K, respectively, in addition, the PL of (NH4)2S passivation InAs nanowires is detected at room temperature, which provides a possibility for future InAs nanowires based middle infrared nanophoton devices.
keywords:InAs nanowires  sulfide  surface states  photoluminescence
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Copyright:《Journal of Infrared And Millimeter Waves》