The studies on device design of planner PIN HgCdTe avalanche photodiode
Received:March 02, 2019  Revised:December 18, 2019  download
Citation:
Hits: 493
Download times: 249
Author NameAffiliationE-mail
CHENG Yushun Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Sciences, Beijing 100049, China 
jin_music@qq.com 
GUO Huijun Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China guohuijun@mail.sitp.ac.cn 
LI Hao Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Sciences, Beijing 100049, China 
 
CHEN Lu Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China chenlu@mail.sitp.ac.cn 
LIN Chun Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
HE Li Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
Abstract:HgCdTe avalanche photodiodes (APDs) of linear mode have attracted much attention for their prospective applications, due to the lowest excess noise close to zero, operating bias in the range of -12~0V, and linear gain tunable as well. In this paper, we investigated the dark current mechanism and Okuto-Crowell model based on the PIN structure of mid-wave infrared HgCdTe e-APD. The characteristics of dark current and the gain were simulated. The thickness and carriers concentration of intrinsic region were discussed, which would impact on the dark current and the gain. The results indicated that the peak intensity of electric field would significantly increase the band to band generation, even up to several orders of magnitude. BBT current could be suppressed by increasing the thickness of the intrinsic region, as well as reducing the carrier concentration. Unfortunately, the gain and BBT current would both increase with electric field. The gain normalized dark current (GNDC) is prospective by means of tradeoff between the dark current and the gain. In our studies, intrinsic region with 3 μm and the concentration less than 5×1014cm-3 are optimal. The APD I-V results demonstrated that the theoretical model was identical with the experimental data.
keywords:HgCdTe  APD  simulation
View Full Text  HTML  View/Add Comment  Download reader

Copyright:《Journal of Infrared And Millimeter Waves》