Simulation and fabrication of 1.55 μm AlGaInAs/InP quantum well lasers with low beam divergence
Received:February 01, 2019  Revised:March 06, 2019  download
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Author NameAffiliationE-mail
XIONG Di State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
xiongdi@semi.ac.cn 
GUO Wen-Tao State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China wtguo@semi.ac.cn 
GUO Xiao-Feng State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China  
LIU Hai-Feng State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
LIAO Wen-Yuan State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
LIU Wei-Hua State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
ZHANG Yang-Jie State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
 
CAO Ying-Chun State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China  
TAN Man-Qing State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 
mqtan@semi.ac.cn 
Abstract:1.55 μm AlGaInAs/InP quantum well lasers with low beam divergence are theoretically designed and experimentally fabricated. An asymmetrical mode expand layer (MEL) was inserted in lower cladding to expand near field intensity distribution and decrease internal loss. Simulation results showed that the use of MEL won’t influence the laser performance negatively but dramatically decrease the vertical beam divergence at the cost of slightly increase of threshold current. And the experiment results showed high agreement to it. With a 4 μm-wide and 1000 μm-long ridge waveguide laser with MEL, the threshold current and output power of single facet without coating is 56 mA and 17.38 mw@120 mA, and the slope efficiency is 0.272 W/A. The vertical beam divergence is 29.6° and decreases about 35.3% compared to that of typical lasers.
keywords:InP-based lasers  beam divergence  intensity distribution
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