HgCdTe avalanche photodiode FPA
Received:January 09, 2019  Revised:July 08, 2019  download
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Author NameAffiliationE-mail
LI Hao Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China
University of Chinese Academy of Science, Beijing 100049, China 
lihaoxzy@163.com 
LIN Chun Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China
ShanghaiTech University, Shanghai 201210, China 
 
ZHOU Song-Min Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China  
GUO Hui-Jun Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China  
WANG Xi Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China  
CHEN Hong-Lei Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China  
WEI Yan-Feng Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China  
CHEN Lu Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China  
DING Rui-Jun Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China  
HE Li Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China  
Abstract:HgCdTe APD is one of the developing trends of third generation inferred FPA detectors. In this paper we report the result on a 1616 arrays of HgCdTe avalanche photodiode with 3.56 μm cutoff wavelength. The operability in gain exceeds 90% and relative gain dispersion is lower than 20%. NEPh is about 60 at 6 V bias with excess noise factor close to 1.2.
keywords:HgCdTe  APD  FPA  NEPh  excess noise factor.
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