High responsivity Bi2Te3-based room temperature terahertz detector based on metal-semiconductor-metal (MSM) structure
Received:December 12, 2018  Revised:December 20, 2018  download
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Author NameAffiliationE-mail
XU Xin-Yue Department of Applied Physics, College of Science, DongHua University, Shanghai 201620, China
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
18817831389@163.com 
ZHANG Xiao-Dong Department of Applied Physics, College of Science, DongHua University, Shanghai 201620, China
Shanghai Institute of Intelligent Electronics and Systems, Shanghai 201620, China 
xdzhang@dhu.edu.cn 
WU Jing State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
JIANG Lin State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
WU Cai-Yang State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Sciences, Beijing 100049, China 
 
YAO Niang-juan State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
QU Yue State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Sciences, Beijing 100049, China 
 
ZHOU Wei State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
YIN Yi-Ming State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Sciences, Beijing 100049, China 
 
HUANG Zhi-Ming State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China zmhuang@mail.sitp.ac.cn 
Abstract:In this study, a metal-topological insulator-metal (MTM) structure terahertz photodetector was fabricated based on a two-dimensional topological insulator Bi2Te3 material using a micro-nano process. The responsivity of device reaches 2×103 A/W at 0.02 THz, the noise equivalent power (NEP) is lower than 7.5×10-15 W/Hz1/2, and the detectivity D* is higher than 1.62 ×1011 cm?Hz1/2 /W; The responsivity is up to 281.6 A/W at 0.166 THz, NEP is lower than 5.18×10-14 W/Hz1/2, D* is higher than 2.2×1010 cm?Hz1/2/W; The responsivity is up to 7.74 A/W at 0.332 THz, NEP is lower than1.75×10-12 W/Hz1/2, D* is higher than 6.7×108 cm?Hz1/2 /W; at the same time, the response time of device has 7~8 μs in the terahertz band. This work breaks through the inter-band transition of traditional photon detection, and realizes terahertz detectors with room temperature operation, high response rate, high speed response and high sensitivity.
keywords:terahertz detector  two-dimensional material  Bi2Te3
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Copyright:《Journal of Infrared And Millimeter Waves》