Circular single-photon avalanche diode withhigh premature edge breakdown and extended spectrum
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1.School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105,China;2.School of Physics and Electronics, Hunan Normal University, Changsha 410081,China;3.School of Mechatronic Engineering and Automation,Shanghai University, Shanghai 200444, China

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National Natural Science Foundation of China 61774129 61827812 61704145;Changsha Science and Technology Project kq1801035Supported by National Natural Science Foundation of China (61774129, 61827812, 61704145),and Changsha Science and Technology Project(kq1801035).

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    Abstract:

    This paper presents a 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology high premature edge breakdown, extended spectrum and low dark count rate circular single-photon avalanche diode (SPAD) which together form a novel wide spectrum fluorescence correlation spectroscopy (FCS) detector. The circular device consists of a p+/deep n-well junction, a p-well guard-ring, and a poly guard-ring. Simulations on a Silvaco TCAD 3D device also show that the 10 μm-diameter circular p+/deep n-well SPAD device has high premature edge breakdown characteristics. Moreover,compared to the SPAD p+/n-well junction, the p+/deep n-well junction has a longer wavelength response and spectral expansion. The device achieves wide spectral sensitivity enabling greater than 40% photon detection probability from 490 to 775 nm wavelength at 0.5 V excess bias. The circular p+/deep n-well SPAD has fine avalanche breakdown is 15.14 V and a low dark count rate of 638 Hz at 25℃.

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JIN Xiang-Liang, ZENG Duo-Duo, PENG Ya-Nan, YANG Hong-Jiao, PU Hua-Yan, PENG Yan, LUO Jun. Circular single-photon avalanche diode withhigh premature edge breakdown and extended spectrum[J]. Journal of Infrared and Millimeter Waves,2019,38(4):403~407

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History
  • Received:December 06,2018
  • Revised:May 24,2019
  • Adopted:January 28,2019
  • Online: September 06,2019
  • Published: