Noise characteristics of short wavelength infrared InGaAs focal plane arrays
Received:November 15, 2018  Revised:May 30, 2019  download
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Author NameAffiliationE-mail
YU Chun-Lei State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
State Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Sciences, Beijing 100049, China 
17602100713@163.com 
LI Xue State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
State Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
 
SHAO Xiu-Mei State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
State Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
 
HUANG Song-Lei State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
State Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
 
GONG Hai-Mei State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
State Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 
hmgong@sitp.ac.cn 
Abstract:In order to study the noise characteristics of InGaAs focal plane arrays (FPAs), the 160×128 FPAs based on different absorber concentration materials with the same circuit structure were designed and prepared, and the noise characteristics at different temperature and integral time were tested. By studying the relationship between different material parameters, device performance and focal plane noise, the noise characteristics of short-wave infrared InGaAs FPAs are analyzed quantitatively. The results show that the noise mainly comes from the coupling noise of the focal plane and the noise of the detector. The detector noise is influenced by the dark current and operating temperature of the detector, which determines the total noise level of the focal plane in the long integral time. To manufacture photodetectors with low dark current and low capacitance is an effective way to reduce the focal plane noise.
keywords:InGaAs  focal plane arrays  noise characteristics
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Copyright:《Journal of Infrared And Millimeter Waves》