Improved performances of 2.6 μm In0.83Ga0.17As/InP photodetectors on digitally-graded metamorphic pseudo-substrates
Received:October 24, 2018  Revised:January 07, 2019  download
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Author NameAffiliationE-mail
SHI Yan-Hui State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences yhshi@mail.sim.ac.cn 
MA Ying-Jie State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences  
GU Yi State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences ygu@mail.sim.ac.cn 
CHEN Xing-You State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences  
YANG Nan-Nan State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences  
GONG Qian State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences  
ZHANG Yong-Gang State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences  
Abstract:Impacts of the total period number for the In0.83Al0.17As/In0.52Al0.48As digitally-graded metamorphic buffer (DGMB) on the performances of 2.6 μm In0.83Ga0.17As photodiodes (PDs) have been investigated. An increase of the total period number from 19 to 38 for the In0.83Al0.17As/In0.52Al0.48As DGMB with the same thickness has shown improved crystal qualities for the In0.83Ga0.17As/In0.83Al0.17As photodiode layers grown on such pseudo-substrates. An increased strain relaxation degree up to 99.8%, a reduced surface roughness, enhanced photoluminescence intensities as well as photo responsivities, and suppressed dark currents are observed simultaneously for the In0.83Ga0.17As photodiode on the DGMB with a period number of 38. These results suggest that with more periods, DGMB can restrain the transmission of the threading dislocations more efficiently and reduce the residual defect density.
keywords:digital-grading, metamorphic, buffer, InGaAs, photodetectors
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