Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs
Received:January 30, 2018  Revised:March 08, 2018  download
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Author NameAffiliationE-mail
LIU Jun Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology lj_bit@163.com 
YU Wei-Hua Beijing Institute of Technology ywhbit@bit.edu.cn 
YANG Song-Yuan Beijing Institute of Technology  
HOU Yan-Fei Beijing Institute of Technology  
CUI Da-Sheng Beijing Institute of Technology  
LYU Xin Beijing Institute of Technology  
Abstract:This paper presents an improved small-signal model and a W-band monolithic low noise amplifier (LNA) using 100 nm InAlAs/InGaAs/InP-based high electron mobility transistors (HEMT) technology.For improving the fitting accuracy of S-parameters in low frequency, the small-signal model takes into account differential resistances of gate-to-source and gate-to-drain diodes, which modeled by resistances Rfsand Rfd.A W-band LNA monolithic millimeter-wave integrated circuit (MMIC) has been designed and fabricated based on this model to verify the feasibility of this model.The amplifier is measured on-wafer with a small-signal peak gain of 14.4 d B at 92.5 GHz and 3-dB bandwidth from 85 to 110 GHz.In addition, the MMIC also exhibits an excellent noise characteristic with the noise figure of 4.1 dB and the associate gain of 13.8 d B at 88 GHz.This MMIC amplifier shows wider 3-dB bandwidth and higher per-stage gain than others results at the similar band.
keywords:InAlAs/InGaAs/InP, PHEMTs, small-signal model, millimeter and submillimeter, MMIC, LNA
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Copyright:《Journal of Infrared And Millimeter Waves》