Simulation of profile evolution in HgCdTe ion beam etching by the level set method
Received:January 23, 2018  Revised:April 19, 2018  download
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Author NameAffiliationE-mail
LIU Xiang-Yang Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical liuxytry@126.com 
XU Guo-Qing Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical  
JIA Jia Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical  
SUN Yan National Laboratory for Infrared Physics  
LI Xiang-Yang Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical  
Abstract:A numerical model was established by the level set method to simulate the etching profile evolution in HgCdTe ion beam etching. The input parameters are: mask thickness、the slope of mask sidewall、trench width、ion angular distributions, etching speed, et al. Etching lag and etching profile of HgCdTe were simulated and compared with experimental results. The results shows that, given nominal trench width 4?10?m, the errors between simulated etch depths and that of experiments are 6~20%. The profile evolution of etching mask was simulated and an example was given to illustrate how to design the mask thickness to improve the aspect ratio.
keywords:HgCdTe, ion  beam, etching  profile, the  level set  method, etch  lag , aspect  ratio
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