Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer
Received:January 19, 2018  Revised:May 19, 2018  download
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Author NameAffiliationE-mail
ZHANG Jing School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices zhangjing6048@126.com 
LYU Hong-Liang School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices hllv@mail.xidian.edu.cn 
NI Hai-Qiao State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences  
NIU Zhi-Chuan State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences  
ZHANG Yi-Men School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices  
ZHANG Yu-Ming School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices  
Abstract:In order to achieve lowcontact resistances of InAs/AlSb heterostructures with the undoped In As cap layer, Pd/Ti/Pt/Au alloyed ohmic contact has been investigated.The contact resistance Rcis evaluated by using transmission-line-model (TLM) measurements.A minimum of 0.128 Ω·mm has been obtained by using the optimal rapid thermal annealing (RTA) with the condition at temperature of 275 ℃ and annealing time of 20 s.The measurement from transmission electron microscopy (TEM) demonstrates that the Pd atoms diffuses into the semiconductor, which is beneficial to the formation of a high-quality ohmic contact during the rapid thermal annealing.This study shows that the contact resistance Rcis reduced significantly after Pd/Ti/Pt/Au alloyed ohmic contact, which is suitable for its application in InAs/AlSb heterostructures.
keywords:Ohmic contacts, rapid thermal annealing, InAs/AlSb heterostructures
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Copyright:《Journal of Infrared And Millimeter Waves》