(英)GaAs基InAs/AlSb二维电子气结构的生长优化
Received:November 28, 2017  Revised:February 27, 2018  点此下载全文
引用本文:崔晓然,吕红亮,李金伦,苏向斌,徐应强,牛智川.(英)GaAs基InAs/AlSb二维电子气结构的生长优化[J].Journal of Infrared and Millimeter Waves,2018,37(4):385~388
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Author NameAffiliationE-mail
CUI Xiao-Ran School of Microelectronics,Xidian University,Xi’an cxr_904@163.com 
Lv Hong-Liang School of Microelectronics,Xidian University,Xi’an  
Li Jin-Lun Department of Missile Engineering, Shijiazhuang Campus, Army Engineering University, Shijiazhuang  
Su Xiang-Bin Institute of Photonics and Photon-Technology, Northwest University, Xi’an  
Xu Ying-Qiang State Key Laboratory for Superlattices,Institute of Semiconductors,Chinese Academy of Sciences yingqxu@semi.ac.cn 
NIU Zhi-Chuan State Key Laboratory for Superlattices,Institute of Semiconductors,Chinese Academy of Sciences  
基金项目:国家重点研发计划(2016CBYFB0402403)
中文摘要:采用分子束外延设备(MBE),外延生长了InAs/AlSb二维电子气结构样品。样品制备过程中,通过优化AlGaSb缓冲层厚度和InAs/AlSb界面厚度、改变AlSb隔离层厚度,分别对比了材料二维电子气特性的变化,并在隔离层厚度为5nm时,获得了室温电子迁移率为20500 cm2/V·s,面电荷密度为2.0×1012/cm2的InAs/AlSb二维电子气结构样品,为InAs/AlSb高电子迁移率晶体管的研究和制备提供了参考依据。
中文关键词:二维电子气  迁移率  高电子迁移率晶体管  分子束外延
 
Growth optimization of GaAs-based InAs/AlSb 2DEG structure
Abstract:InAs/AlSb two-dimensional electron gas (2DEG) structures were successfully grown by MBE equipment. 2DEG characteristics of samples were improved by optimizing the the thickness of AlGaSb buffer layer, the thickness of InAs/AlSb interface layer, and the thickness of AlSb spacer. The InAs/AlSb 2DEG structure sample with an electron mobility of 20500 cm2/V·s and a sheet electron density of 2.0×1012 /cm2 were achieved when the thickness of AlSb spacer is fixed at 5 nm. It provides a reference for the research and fabrication of InAs/AlSb HEMT.
keywords:2DEG, mobility, HEMT, MBE
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