High-frequency InAlN/GaN HFET with an fT of 350 GHz
Received:July 04, 2017  Revised:August 28, 2017  download
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Author NameAffiliationE-mail
FU Xing-Chang Southeast University pasf365@163.com 
LYU Yuan-Jie National Key Laboratory of Application Specific Integrated Circuit (ASIC) yuanjielv@163.com 
ZHANG Li-Jiang Hebei Semiconductor Research Institute  
ZHANG Tong Southeast University tzhang@seu.edu.cn 
LI Xian-Jie Hebei Semiconductor Research Institute  
SONG Xu-Bo Hebei Semiconductor Research Institute  
ZHANG Zhi-Rong Hebei Semiconductor Research Institute  
FANG Yu-Long National Key Laboratory of Application Specific Integrated Circuit (ASIC)  
FENG Zhi-Hong National Key Laboratory of Application Specific Integrated Circuit (ASIC)  
Abstract:Scaled InAlN/GaN heterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency (fT) were realized by employing nonalloyed regrown n+-GaN Ohmic contacts, in which the source-to-drain distance (Lsd) was scaled to 600 nm. By processing optimization of dry etching and n+-GaN regrowth, a low total Ohmic resistance of 0.16 Ω·mm is obtained, which is a recorded value regrown by metal organic chemical vapor deposition (MOCVD). A 34 nm rectangular gate was fabricated by self-aligned-gate technology. The electrical characteristics of the devices, especially for the RF characteristics, were improved greatly after the reduction of ohmic resistance and gate length. The fabricated InAlN/GaN HFETs show a low on resistance (Ron) of 041 Ω·mm and a high drain saturation current density of 2.14 A/mm at Vgs=1 V. Most of all, the device shows a high fT of 350 GHz, which is a recorded result reported for GaN-based HFETs in domestic.
keywords:InAlN/GaN  HFET  current gain cut-off frequency  nonalloyedOhmic contacts  Nano-gate
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Copyright:《Journal of Infrared And Millimeter Waves》