Design and implementation of high performance single-photon avalanche diode in 180 nm CMOS technology
Received:June 30, 2017  Revised:September 26, 2017  download
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Author NameAffiliationE-mail
JIN Xiang-Liang School of Physics and Optoelectronics, Xiangtan University,Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip jinxl@xtu.edu.cn 
CAO Can School of Physics and Optoelectronics, Xiangtan University,Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip  
YANG Hong-Jiao School of Physics and Optoelectronics, Xiangtan University,Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip  
Abstract:A wide spectral range and fast Single-photon avalanche diode (SPAD) chip which can be integrated with actively quenching circuit for large array realization is designed and implemented. The precise circuit model of SPAD for simulating the static and dynamic behaviors in Geiger-mode is used. The device with an 8 μm diameter active area is fabricated in GSMC 180 nm CMOS image sensor (CIS) technology. With the efficient device’s structure, the low breakdown voltage is 15.2 V and quenching time is 7.9 ns. Additionally, the device achieves wide spectral sensitivity and enables maximum photon detection probability (PDP) of 15.7% from 470 to 680 nm of wavelength at low excess voltage. Moreover, it exhibits a relatively low dark count rate (DCR) at room temperature.
keywords:SPAD  Geiger mode  CIS technology  wide spectral range
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Copyright:《Journal of Infrared And Millimeter Waves》