Refractive index of Ge film at low temperature
Received:June 24, 2017  Revised:September 01, 2017  download
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Author NameAffiliationE-mail
XU Ling-Mao Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics xulm1990@163.com 
ZHOU Hui Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics zhouhui510@sina.com 
ZHANG Kai-Feng Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics  
ZHENG Jun Science and Technology on Vacuum Technology and Physics Laboratory  
LI Kun Science and Technology on Vacuum Technology and Physics Laboratory  
WANG Ji-Zhou Wuxi Hongrui Aerospace Science and Technology Company Limited  
WANG Duo-Shu   
Abstract:Germanium (Ge) films with physical thickness of 1600nm was deposited on ZnSe substrates by an electron beam evaporation system. The transmittance of Ge film in the range of 2 to 15 μm was measured by a PerkinElmer FTIR cryogenic testing system from 80 K to 300 K with a step length of 20 K. Then, the relationship between the refractive index and wavelength in the 2~12 μm region at different temperatures was obtained by the full spectrum inversion method fitting. It can be seen that the relationship confirms to the Cauchy formula. The relationship between the refractive index of Ge film and the temperature / wavelength can be expressed as n(λ,T)=3.29669+0.00015T+5.96834×10-6T2+0.41698λ2+0.17384λ4, which was obtained by the fitting method based on the Cauchy formula. Finally, the accuracy of the formula was verified by comparing the theoretical value obtained by the formula with the measured result.
keywords:infrared film,Ge film,refractive index
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Copyright:《Journal of Infrared And Millimeter Waves》