Received:December 12, 2016  Revised:April 20, 2017  点此下载全文
引用本文:李彬.InGaAs/InP单光子雪崩光电二极管InP顶层掺杂研究[J].Journal of Infrared and Millimeter Waves,2017,36(4):420~424
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Author NameAffiliationE-mail
LI Bin China electronics Technology Group Corp.No.44 Research Institute 
中文关键词:InGaAs/InP  单光子雪崩光电二极管  顶层  掺杂浓度  
Study of InP cap layer doping density in InGaAs/InP Single-photon Avalanche Diode
Abstract:The influence of the InP cap layer doping density of InGaAs/InP SPAD is studied through theoretical calculation and comparative experiment. Theoretical results show that lower cap layer doping density is beneficial to suppress premature edge breakdown, reduce tunneling carrier generation rate, and increase breakdown probability. Experimental results show that devices with unintentionally doped cap layer have achieved 20% single photon detection efficiency and 1 kHz dark count rate at 223K. Compared to devices with cap layer doping density of 5E15/cm^3, the single photon detection efficiency increases by 3%~8%, and the dark count rate decreases by about an order of magnitude. It is demonstrated that reduce the cap layer doping density is beneficial to improve the performance of InGaAs/InP SPAD.
keywords:InGaAs/InP  Single-photon Avalanche Diode  cap layer  doping density  
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