InSb薄膜磁阻效应的厚度依赖性
Received:October 03, 2016  Revised:December 26, 2016  点此下载全文
引用本文:张豫徽,宋志勇,陈平平,林铁,田丰,康亭亭.InSb薄膜磁阻效应的厚度依赖性[J].Journal of Infrared and Millimeter Waves,2017,36(3):311~315
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Author NameAffiliationE-mail
ZHANG Yu-Hui School of materials science and engineering of university of shanghai for science and technology zyh15286829397@163.com 
SONG Zhi-YONG 上海理工大学  
CHEN Ping-Ping 上海理工大学  
LIN Tie 中国科学院上海技术物理研究所  
TIAN Feng 中国科学院上海技术物理研究所  
KANG Ting-Ting 中国科学院上海技术物理研究所  
基金项目:国家自然科学基金(11204334,61475178)
中文摘要:在12~300 K的温度范围内研究了InSb薄膜(利用MBE生长)的磁阻效应随厚度的变化关系.实验发现厚的InSb薄膜只能产生半经典(∝B2)磁阻效应.而减小薄膜厚度, 在薄的InSb薄膜中会更容易出现弱反局域化效应, 从而造成在低温下(< 35 K) 出现了一个异常的随温度增加而迁移率降低的趋势.我们发现该弱反局域化效应可用HLN模型拟合, 证明了它可能来源于二维(2-D)体系, 比如InSb的界面态.
中文关键词:锑化铟  磁阻效应  弱反局域化效应  弱局域化效应  界面/表面态  
 
Thickness-dependent magnetoresistance effects in InSb films
Abstract:We experimentally investigated the thickness-dependent magnetoresistance properties of InSb films in the temperature range of 12~300 K. The samples were grown on semi-insulating GaAs (100) substrates by molecular beam epitaxy (MBE). It was observed that the thick InSb only can show the semi-classical B2 dependence magnetoresistance resulted from the Lorentz deflection of carriers. At the same time, we found that weak antilocalization (WAL) effect can be much enhanced by reducing the sample’s thickness(with the thickness ~0.1 μm). The thin sample’s WAL magnetoresistance plot can be well fitted by Hikan-Larkin-Nagaoka (HLN) model, which demonstrates that the obseved WAL effect for thin InSb is with a 2-dimension character, which can be associated with the surface/interface states of InSb.
keywords:InSb  weak antilocalization effect  magnetoresistance  surface/interface states
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