2微米波段低发散角瓦级GaSb基宽区量子阱激光器
Received:August 31, 2016  Revised:October 25, 2016  点此下载全文
引用本文:邢恩博,戎佳敏,张宇,佟存柱,田思聪,汪丽杰,舒适立,卢泽丰,牛智川,王立军.2微米波段低发散角瓦级GaSb基宽区量子阱激光器[J].Journal of Infrared and Millimeter Waves,2017,36(3):280~283
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Author NameAffiliationE-mail
XING En-Bo State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences xiaoxing1228@126.com 
RONG Jia-Min State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences  
ZHANG Yu Institute of Semiconductors,Chinese Academy of Sciences  
TONG Cun-Zhu State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences xiaoxing1228@126.com 
TIAN Si-Cong State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences  
WANG Li-Jie State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences  
SHU Shi-Li State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences  
LU Ze-Feng State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences  
NIU Zhi-Chuan Institute of Semiconductors,Chinese Academy of Sciences  
WANG Li-Jun State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences  
基金项目:国家自然科学基金(No.61404138, No.61435012),国家科技计划项目对俄科技合作专项(No. 2013DFR00730),国家重点基础研究发展计划(2013CB643903),吉林省科技发展计划(20150520105JH)。
中文摘要:通过在宽区GaSb基半导体激光器波导中引入鱼骨型微结构, 实现了瓦级激光输出并且改善了侧向发散角.本文通过分析微结构的刻蚀深度对激光功率和远场特性的影响, 研究并发现了微结构的引入可以明显的提高激光器输出功率, 同时深刻蚀的微结构对降低模式数和侧向发散角有着更明显的改善作用.相比于未引入微结构的激光器, 引入深刻蚀微结构的宽区激光器侧向95%功率定义的远场发散角降低了大约57%, 并且实现了超过1.1 W的最大连续输出功率.
中文关键词:GaSb基  宽区激光器  微结构  远场发散角
 
Watt-class low divergence 2 μm GaSb based broad-area quantum well lasers
Abstract:GaSb based broad-area (BA) diode lasers with watt-class emission power and improved divergence were demonstrated using a fishbone shape microstructure. The influences of etching depth of microstructure on the emission and far-field performance were investigated. It was found that the utilization of microstructure was able to enhance the emission power evidently. Moreover, the deeply etched microstructure was more effective on the decrease of mode number and lateral far-field divergence. Compared with the device without microstructure, the deeply etched BA lasers show 57% decrease in the lateral far-field angle defined by the 95% power content, and the maximum continuous-wave (CW) output power exceeds 1.1 W.
keywords:GaSb based  broad-area (BA) diode lasers  microstructure  lateral far-field divergence
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