(英))关于GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面的研究
Received:July 11, 2016  Revised:August 31, 2016  点此下载全文
引用本文:郝瑞亭,任洋,刘思佳,郭杰,王国伟,徐应强,牛智川.(英))关于GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面的研究[J].Journal of Infrared and Millimeter Waves,2017,36(2):135~138
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Author NameAffiliationE-mail
HAO Rui-Ting Yunnan Normal University ruitinghao@semi.ac.cn 
REN Yang Yunnan Normal University renyang702@outlook.com 
LIU Si-Jia Yunnan Normal University  
GUO Jie Yunnan Normal University  
WANG Guo-Wei Institute of Semiconductors, Chinese Academy of Sciences  
XU Ying-Qiang Institute of Semiconductors, Chinese Academy of Sciences  
NIU Zhi-Chuan Institute of Semiconductors, Chinese Academy of Sciences  
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目);国家教育部博士点基金
中文摘要:本论文系统的研究了,随着GaSb薄膜生长温度的降低,V/III比的变化对薄膜低缺陷表面质量的影响。为了获得良好表面形貌的GaSb外延层,生长温度与V/III比均需要同时降低。当Sb源裂解温度为900℃时,生长得到低缺陷表面的低温GaSb薄膜的最佳生长条件是生长温度为在再构温度的基础上加60℃且V/III比为7.1。
中文关键词:低缺陷  锑化镓  原子力显微镜  V/III比
 
Low-defect surfaces of Low-temperature GaSb thin films on GaSb substrates
Abstract:The influence on the Low-defect surface of GaSb thin-film material by the ratio of Sb to Ga (V/III) along with the reducing of the growth temperature is investigated systematically. In order to obtain a good surface morphology of the GaSb epitaxial layer with low defect, both of the growth temperature and the V/III ratio should be reduced at the same time. The optimal growth conditions of Low-temperature GaSb thin films are that the growth temperature is Tc + 60°C and the V/III ratio is about 7.1, when the Sb cracker temperature is 900°C.
keywords:Low-defect  GaSb  AFM  V/III
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