片上太赫兹天线集成器件LT-GaAs外延转移工艺研究
Received:May 30, 2016  Revised:September 28, 2016  点此下载全文
引用本文:郭春妍,徐建星,彭红玲,倪海桥,汪韬,巩辰,左剑,张存林,牛智川.片上太赫兹天线集成器件LT-GaAs外延转移工艺研究[J].Journal of Infrared and Millimeter Waves,2017,36(2):220~224
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Author NameAffiliationE-mail
Guo Chun-Yan Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of CAS, Xi’an Institute of Optics and Precision Mechanics.University of Chinese Academy of Sciences guochunyan@opt.cn 
Xu Jian-Xing State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences.University of Chinese Academy of Sciences  
PENG Hong-Ling Laboratory for Solid State Photoelectric Information Technology, Institute of Semiconductors  
NI Hai-Qiao State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences  
WANG Tao Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of CAS, Xi’an Institute of Optics and Precision Mechanics  
Gong Chen Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University  
Zuo Jian Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University  
ZHANG Cun-Lin Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University  
NIU Zhi-Chuan State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences zcniu@semi.ac.cn 
基金项目:国家自然科学基金(11204190, 61274125);北京市教育委员会科技计划面上项目(KM201610028005);科技部“国家重大科学仪器设备开发专项”基金资助(2012YQ14005)
中文摘要:提供了一种实现片上太赫兹天线集成器件光电导开关材料低温GaAs(LT-GaAs)外延层的转移工艺,使用HNO3-NH4OH-H2O-C3H8O7·H2O溶液-H2O2-HCl腐蚀体系化学湿法腐蚀分子束外延(MBE)生长的外延材料,Hall测试表明MBE生长的此外延材料电阻率在106Ω·cm量级。剥离半绝缘GaAs(GaAs SISI-GaAs)衬底层与Al0.9Ga0.1As牺牲层得到1.5μm LT-GaAs与环烯烃聚合物(COP)键合的结构。原子力显微镜(AFM)、扫描电子显微镜(SEM)、高倍显微镜形貌表征表明剥离后的结构表面平整光滑,表面粗糙度(RMS)为2.28nm,EDAX能谱仪分析显示该结构中不含Al组分,满足光刻形成光电导开关的要求。
中文关键词:片上太赫兹天线集成  LT-GaAs  外延层转移  化学湿法腐蚀
 
Study of Process for Epitaxial Layer Transfer of On-chip THz Antenna Integrated Device
Abstract:A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of GaAs SISI-GaAs and Al0.9Ga0.1As. AFM、SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28nm. EDAX indicated there wasn’t Al in this structure. It can be used to make photoconductive switch.
keywords:on-chip THz antenna integrated device  LT-GaAs  epitaxial layer Transfer  wet chemical etching
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