片上太赫兹天线集成器件LT-GaAs外延转移工艺
Received:May 30, 2016  Revised:September 28, 2016  点此下载全文
引用本文:郭春妍,徐建星,彭红玲,倪海桥,汪韬,田进寿,牛智川,吴朝新,左剑,张存林.片上太赫兹天线集成器件LT-GaAs外延转移工艺[J].Journal of Infrared and Millimeter Waves,2017,36(2):220~224
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Author NameAffiliationE-mail
GUO Chun-Yan Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of CAS, Xi’an Institute of Optics and Precision Mechanics guochunyan@opt.cn 
XU Jian-Xing State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences.University of Chinese Academy of Sciences  
PENG Hong-Ling Laboratory for Solid State Photoelectric Information Technology, Institute of Semiconductors  
NI Hai-Qiao State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences  
WANG Tao Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of CAS, Xi’an Institute of Optics and Precision Mechanics  
TIAN Jin-Shou   
NIU Zhi-Chuan State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences zcniu@semi.ac.cn 
WU Chao-Xin Xi'an Jiaotong University  
ZUO Jian Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University  
ZHANG Cun-Lin Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University  
基金项目:国家自然科学基金(11204190, 61274125);北京市教育委员会科技计划面上项目(KM201610028005);科技部“国家重大科学仪器设备开发专项”基金资助(2012YQ14005)
中文摘要:提供了一种实现片上太赫兹天线集成器件光电导开关材料低温GaAs(LT-GaAs)外延层的转移工艺,使用HNO3-NH4OH-H2O-C3H8O7·H2O溶液-H2O2-HCl腐蚀体系化学湿法腐蚀分子束外延(MBE)生长的外延材料,Hall测试表明MBE生长的此外延材料电阻率在106Ω·cm量级。剥离半绝缘GaAs(GaAs SISI-GaAs)衬底层与Al0.9Ga0.1As牺牲层得到1.5μm LT-GaAs与环烯烃聚合物(COP)键合的结构。原子力显微镜(AFM)、扫描电子显微镜(SEM)、高倍显微镜形貌表征表明剥离后的结构表面平整光滑,表面粗糙度(RMS)为2.28nm,EDAX能谱仪分析显示该结构中不含Al组分,满足光刻形成光电导开关的要求。
中文关键词:片上太赫兹天线集成  LT-GaAs  外延层转移  化学湿法腐蚀
 
Transfer process of LT-GaAs expitaxial films for on-chip terahertz antenna integrated device
Abstract:A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of GaAs SISI-GaAs and Al0.9Ga0.1As. AFM、SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28nm. EDAX indicated there wasn’t Al in this structure. It can be used to make photoconductive switch.
keywords:on-chip THz antenna integrated device  LT-GaAs  epitaxial layer Transfer  wet chemical etching
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