大功率高效率2μm锑化镓基量子阱激光器
Received:March 25, 2016  Revised:April 19, 2016  点此下载全文
引用本文:廖永平,张宇,杨成奥,黄书山,柴小力,王国伟,徐应强,倪海桥,牛智川.大功率高效率2μm锑化镓基量子阱激光器[J].Journal of Infrared and Millimeter Waves,2016,35(6):672~675
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Author NameAffiliationE-mail
LIAO Yong-Ping State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences liaoyp981@semi.ac.cn 
ZHANG Yu Institute of Semiconductor, Chinese Academy of Sciences  
YANG Cheng-Ao Institute of Semiconductor, Chinese Academy of Sciences  
HUANG Shu-Shan Institute of Semiconductor, Chinese Academy of Sciences  
CHAI Xiao-Li Institute of Semiconductor, Chinese Academy of Sciences  
WANG Guo-Wei Institute of Semiconductor, Chinese Academy of Sciences  
XU Ying-Qiang Institute of Semiconductor, Chinese Academy of Sciences  
NI Hai-Qiao Institute of Semiconductor, Chinese Academy of Sciences  
NIU Zhi-Chuan Institute of Semiconductor, Chinese Academy of Sciences zcniu@semi.ac.cn 
基金项目:国家重点基础研究发展计划(973计划);国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:通过MBE外延系统生长了2 μm GaSb基AlGaAsSb/InGaSb I型量子阱激光器, 并制备了宽面条形波导激光器件, 在20℃工作温度下, 器件最大连续激射功率达到1.058 W, 当注入电流为0.5 A时, 峰值波长为1977μm, 最大能量转换效率为20.2%, 在脉冲频率为1 000 Hz, 占空比为5%的脉冲工作模式下, 最大激射功率为2.278 W.
中文关键词:大功率  激光二极管  中红外  量子阱
 
High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm
Abstract:GaSb-based AlGaAsSb/InGaSb type-I quantum-wells (QW) 2 μm laser diodes (LDs) have been grown by MBE system. Stripe-type waveguide LDs with facets uncoated were fabricated and characterized. For single LD device, the maximum output power was 1.058 W under continuous wave (CW) operation at working temperature of 20℃. The maximum wall plug efficiency (WPE) was 20.2% and peak wavelength was 1.977 μm with injection current 0.5 A. The output power under pulse mode of 1000 Hz in 5% duty cycles was 2.278 W.
keywords:high power, laser diodes, infrared, quantum wells
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