Abstract:The linear combination Clipped method was used to obtain an original binary interconnection weight between the input layer and the middle layer of the WTA neural network model.This interconnection weight makes the WTA model with the rotation invariance.To improve the rate of correct recognition of the system the Local Monte Carlo was used to obtain the optimum interconnection weight.A computer simulation was completed for four kinds of flyers. The results of the experiment demonstrated that the WTA model is suitable for recognizing the rotating objects. A hybrid electro optic system was presented to implement the WTA model.

Abstract:基于电磁场Ｍａｘｗｅｌｌ方程组及其边界条件，导出了二元光学器的严格耦合波衍射方程，分析了二元位相光栅的反射特性，在适当选取光栅的几何参数时，光栅的反射率可以减小到近似为零，这种减反射光栅的特性优于传统减反膜。

Abstract:A feature extracting method based on radius vectors was introduced.By using a directional factor,the proposed feature gives a complete description of the shapes,and it eliminates the ambiguity that may occur in the traditional shape representation of concave shapes.The normalized features can be used for final classification.With the help of a three layer BP neural network,satisfactory results in recognizing characters and military objects were carried out.

Abstract:An adaptive image segmentation method applied to real time tracking was proposed.Compared with several segmentation approaches considered as better ones currently,the proposed approach possesses some remarkable advantages in the aspects of precision and real time performance,which have been successfully used in whole scene searching and completely implemented in hardware.

Abstract:利用Ｋｏｈｏｎｅｎ侧抑制自动组织神经网络算法和改进的增量算法，对三维多目标识别中的同一目标不同训练样本由单一编码改为重编码，减轻了多层级联神经网络中第一级网络权重的学习负担，在不降低网络识别目标正确率的条件下，使权重学习的收敛性及收敛速度得到较大改善。

Abstract:Man made air target infrared images were analyzed by using fractal theory and lacunarity feature was extracted for recognition,which is a high order fractal feature.In contrast to the traditional image features,recognition by using this feature will have higher reliability and geometric invariation,shown by experiments.

Abstract:利用光热电离光谱方法研究了氮气气氛下生长的含氮Ｓｉ单晶中浅热施主的热退火行为．结果表明，氮气氛下生长的Ｓｉ单晶，原生样品中就存在与Ｎ、Ｏ有关的浅热施主（ＳＴＤ）．在４５０℃退火条件下，ＳＴＤ浓度最大；６５０℃退火后，部分ＳＴＤ消失；在９００℃高温下作较长时间退火，由于氧的浓度降低，ＳＴＤ完全消失

Abstract:Resonant Raman spectra of ZnS 0.02 Te 0.98 mixed crystal were measured at 15K and in the pressure range from l to 3GPa.The sample was grown by the MBE method on a semi insulating GaAs substrate with orientation.The resonant Raman scattering with 488.0 nm line was implemented by using the pressure tuning of the bandgap of the sample.Both ZnTe like and ZnS like LO phonon modes and their overtone and combined modes were observed.The measured pressure coefficient of the ZnTe like LO mode is 4.5 cm -1 /GPa.

Abstract:Carrier concentration distribution of overlap and non overlap photoconductive detectors was calculated and analyzed by solving the one dimensional ambipolar transport equation , according to the overlap structure proposed by M.A.Kinch. The results show that the overlap structure offers a region storing the minority carriers, which suppresses the sweepout and increases the average photo induced carrier concentration, thus improving the responsivily. The overlap structure was implemented by means of two kinds of technologies, and the measured data were given in this paper.

Abstract:Temperature dependence of exciton linewidths in GaAs/AlGaAs and InGaAs/AlGaAs quantum wells with very narrow well widths was investigated.The increase of the acoustic phonon linear scattering coefficient was found with decreasing well width in low temperature range.The experimental results were discussed.

Abstract:系统地讨论了排列相畸变模式液晶光阀结构，原理和制作，结合实际测试对其等效电路和电学匹配进行了分析，详细讨论了它的光电特性及相互关系，实测的液晶垂直排列方式工作的液晶光阀性能指标为，分辨率大于５０ｌｐ／ｍｍ，白光输入灵敏度为６．７７μＷ／ｃｍ＾２，响应时间为２００ｍｓ／３００ｍｓ，白光输出对比度为２００：１。

Abstract:The dynamic process of nonlinear absorption in a semiconductor medium caused by nonlinear optical pulse propagation in the condition of nonresonance was studied.The threshold intensity formula was deduced in the limit of small absorption,which describes the relative size of two photon absorption and free carrier absorption.The effect of the sample thickness on the threshold intensity was analyzed.The main origin of the great disparity in the measured values of two photon absorption coefficient of GaAs was explained.

Abstract:利用反射光栅调谐的脉冲ＴＥＡＣＯ２激光１０Ｒ（６）泵浦０．２ｍ长的小型ＮＨ３分子远红外激光器，当泵浦能量为１．１Ｊ，ＮＨ３分子气压为０．９ｋＰａ时，产生２９８μｍ的新谱线，对应Ｖ２：ａＲ（０，０），受激喇曼跃迁。