Abstract:A new analysis method for directly observing deep levels based on photo Hall transient measurement was developed,in which Schottky or p n junction or MIS structure is not necessary to be made. The measured parameters of defects were obtained at almost zero electric field. This method overcomes the influence of electric field, Debye tail,etc.on the characteristics of defects, so it can compensate the insufficiency of deep level transient spectroscopy.The capture barrier of DX center in Ga 0.7 Al 0.3 As was measured by using this method.

Abstract:报道了用光致发光光谱，吸收光谱和光电流谱研究具有相同组伊阱宽，不同覆盖层厚度的应变Ｉｎ０．２０Ｇａ０．８０Ａｓ／ＧａＡｓ单量子阱结构的实验结果，结果理论计算，观察到ＧａＡｓ覆盖层厚度对单量子阱结构的材料质量，应力驰豫和发光淬灭机制的影响，确定了各样品应变值和导带不连续因子Ｑｃ，并讨论了这种结构发光机制。

Abstract:应用共振喇曼和荧光光谱系统地研究了Ａｓ离子注入ＣｄＴｅＭＢＥ外延膜的热退火行为。发现随着退炎温度升高至４４０℃，其晶格恢复和缺陷态消除得最完整当ＴＡ高于４４０℃，晶格质量陡峭地下降，ＴＡ越高，越多的Ａｓ占据Ｔｅ位作为Ｔｅ位受主，样品表现为更小的补系数和更高的空穴浓度。

Abstract:当用强脉冲ＣＯ２－９Ｒ谱线泵浦ＮＨ３分子时，两个喇曼过程ｓ→ａＰ（７，０）和ｓ→ａＰ（７，１）相互作用导致彼此增强；而当ＣＯ２－９Ｒ（３０）谱线泵浦时，出现多个喇曼过程的竞争，一些过程得到增强，另一些过程被削弱。

Abstract:A technique was presented, which deduces the optical constants (the complex refractive indices) of small particles from the measured transmittance spectrum of a dilute polydispersion,by use of the precise Mie scattering theory and the Kramers Kronig dispersion relation. The multi valued characters and the suitable range of applications were discussed. The influence of the size distribution and the transmittance was thoroughly investigated,and it indicates that the errors of the size distribution and the transmittance will influence seriously the absorption index k, but weakly the refractive index n.

Abstract:The Dirac symbol was used to represent the 16 level Hamilton discrete neural network.By using the computer simulation,the storage capacity and the error tolerance capacity of the model were studied and compared with the Hopfield model.The model was applied to recognize the 16 level gray or color patterns.

Abstract:提出一种用３ｆ多路光学相关器实时识别指纹的新方法，其特点是能把光学傅里叶变换获取的频谱特征数据同光学子波变换结果相结合进行目标识别，计算机模拟结果一实验结果表明，该方法对于快速处理／识别指纹一类为复杂的图像目标是有效的。

Abstract:This paper presents a concise review of the silicon based optical waveguides, devices and technology.The low loss waveguides,electro optic waveguide devices,waveguide photodetectors for infrared radiation detection,and SiO 2 optical circuits are included.

Abstract:The basic design theories of several kinds of binary optical beam splitters were described.Comparisons among them in algorithm,diffraction efficiency and reconstruction error were made and some examples were given.

Abstract:A contactless method of microwave reflectance (MR) measurement for the minority carrier lifetime in semiconductors was introduced and compared with the photoconduction decay (PCD) measurement method.