Abstract:Two kinds of photon-gated spectral hole burning material systems were studied,i.e.the inorganic Sin2+-doped fluoride halide mixed crystals and organic donor-acceptor electron transfer systems.The materials were designed and prepared. The storage properties,such as storage densities,working temperature,writing speed and maintaining durations were discussed.

Abstract:A new method for determining the correlation function of light field was theoretically proposed and experimentally performed. It exhibited a large dynamical range over 5 orders of magnitude and an ultrahigh time resolution of sllbpicosecond. The writing and retrieval of the optical data stored holographically in spectral hole burning material were achieved for the first time by the method.

Abstract:he InGaAsP single quantum well microdisk lasers were successfully fabricated by using the conventional liquid phase epitaxy and micro fabrication techniques for the first time.The single mode oscillation in the condition of a much lower threshoed than that of conventional laser diode was observed experimentally.It demonstrated strong mode-selection capability of the microdisk,reflecting the character of a microcavity.

Abstract:用光荧光（ＰＬ）和时间分辨光谱（ＴＲＰＬ）技术研究了ＧａＡＳ／ＡＩＧａＡＳ量子阱结构中荧光上升时间τｆ和激子谱线半宽（ＦＷＨＭ）随阱宽的变化关系，发现在窄阱中，τｆ，随阱宽的变化关系与宽阱时的情况恰恰相反，在窄阱中τｆ随着阱宽的减小而增加，归结为激子二维特性的退化导致声学声子对激子的散射作用减弱造成的．同时观测到窄阱中谱线半宽随着阱宽减小而增加，这也是因为激子特性由维二维向三维转化造成的．

Abstract:he properties of the free-exciton transitions in undoped MOCVD GaAs epitaxial layer of thicknesses varying from 4 to 30 Urn were determined by using the photoconductivity measurements.It was found that as the thickness is increased,the binding energy R.increases,and the free exciton peak for n=1 shifts slightly towards lower energies,but both the intensity of the higher excitonic levels and the lifetime T of the excitons decrease.These effects were attributed mainly to the defects and electrical field near the surface of the epilayer.Finally,the photoluminescence results and the influence of the measurement temperature on them were also discussed.

Abstract:study of the 1.13eV photoluminescence(PL)band in GaAs epilayers grown on St by metal-organic chemical vapor deposition(MOCVD)was made at various temperatures and excitation intensities. The 1.13eV PL band can be explained in terms of the recombination luminescence of the donor-acceptor pair. Changes in PL emission energy and PL intensity as a function of temperature and excitation intensity lead to the identification of a 295meV deep acceptor and a smeV shallow donor.It was verified that the 1.13 eV PL band originates from the recombination luminescence of a St donor on Ga site and the nextnearest neighbor Ga vacancy acceptor.

Abstract:获得高分辨ＧａＰ（Ｎ）光致发光光谱，观察到等电子陷陆束缚激子发光中ＬＯ和ｌｏｃ多声子发射，其强度分布答合泊松分布。将声子伴带区分为直接光跃迁和间接光跃迁，并进行了相应讨论，还观察到局域声子效应－－光谱相似定律和相当显著的背景光谱。

Abstract:Based on the effective mass theory, the conditon of normal-incidence absorption of intersubband transitions for n-type semiconductor quantum well(QW)infrared detector was derived by using the expression of matrix element of intersubband transition in the conduction band. Using some simple mathematical methods, the absorption coefficient of normal-incidence radiation can be represented as an analytical function of the growth direction of QWs.The optimization, the limitation of normal-incidence absorption and the comparison between it and parallel-incidence absorption were discussed. By considering the degeneracy and the occupancy of the ellipsoidal constant energy surface, the calculation for four kinds of QWs material was presented for the doping concentration of 1018 cm-3and detecting wavelength of 10pm.Some optimal growth directions of QWs for the largest normal-incidence absorption were proposed,which are useful for the design of the novel QWs infrared detectors.

Abstract:The new push-pull azobenzene compound was synthesized and doped into PMMA films.The nonlinear refractive index of this AD-PMMA film material was measured by the Z-scan technique.The optical storage character was expressed by using the DFWM setup.The excellent real-time and short storage of image information was obtained when He-Ne laser was used as the light source.The minimum writing power was less than 0.1 W/cm2 and the nonresonant storage mechanism was analyzed.