Editor in chief:Jun-Hao CHU
International standard number:ISSN 1001-9014
Unified domestic issue:CN 31-1577
Domestic postal code:4-335
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Yang Laxin , Jiang Shan , Mao Huibing , Lu Wei , Shen Xuechu
1994, 13(1).
Abstract:Photoreflectance (PR) spectroscopy was used to analyze the GaAs/AlGaAs multiple quantum well (MQW) infrared detector structures. The result shows that the important parameters such as the well width, the aluminum composition x, the energy of intersubband transitions and peak wavelength of the detector can be exactly deterllilned by PR spectroscopy. The calculated energies of intersubband transition based on the Kronig-Penny model were compared and proved to be in agreement with the experimental results.
1994, 13(1).
Abstract:研究在外加电场0~50kV/cm范围内,In0.53Ga0.47As/In0.52Al0.48AS宽量子阱电透射光谱中11h激子跃迁的谱线宽度(FWHM).它可分解为由温度及界面粗糙度引起的非均匀展宽(高斯型)和由外场引起的均匀展宽(劳伦兹型).用线性叠加的近似公式代替高斯和劳伦兹方程的卷积,再与实验光谱拟合.谱线总宽度、高斯展宽成份及线性叠加系数η均作为拟合参数得到,从而可得劳伦兹展宽.将与外场的关系曲线与理论作比较,在数量级上一致.
1994, 13(1).
Abstract:对MOCVD生长的GaAs(40)/AlxGa(1-x)As(300)多量子阱结构观察到附内电子从基态到第一激发态跃迁引起的红外吸收.用Bruker红外光谱仪测量,发现了一个峰值在986cm-1(10.1μm)带宽为237cm-1(9~11.5μm)的强吸收峰,该峰位置与阱内电子从基态到第一激发态跃迁所计算的吸收峰位置基本一致.
Liu Zhedrian , Li Guohua , Han Hexiang , Wang Zhaoping
1994, 13(1).
Abstract:Using diamond anvil cells, the photoluminescence (PL) spectra of InxGa(1-x)As/AluGa(1-y).As (x, y = 0.15, 0; 0.15, 0.33; 0, 0.33) multiple quantum wells (MoWs) with well widths from 1.7 to 11.0nm were measured at 77K under highpressure up to 4GPa. The experimental results show that the pressure coefficients of the exciton peaks corresponding to transitions from the first conduction subband to the heavy-hole subband decrease with increasing wen width for in0.15Ga0.85As/GaAs MoWs. However, the corresponding pressure coefficients increase for In0.15Ga0.85As/Al0.33Ga0.67As and GaAs/Af0.33Ga0.67As MQWs, respectively. Calculations based on the Kroulg-Penney model reveal that the increased or decreased conductionfoand offsets and the increased effective masses of electrons with increasing pressure are the maill reasons of the change in the pressure coefficiellts.
Zhong Fuming , Chen Jinyi , Zhu Nanchang
1994, 13(1).
Abstract:The structure perfection of infrared materials of (CdTes-ZnTe)/ZnTe superlattices grown on GaAs (001) by atomic layer epitaxy was investigated by X-ray diffraction (XRD), combined with the analysis of kinematical X-ray diffraction theory and computer simulation of dynamical X-ray diffraction theory. The structure parameters were obtained for the simple and the complex structures of superlattices.
Qiu Yueming , Liu Kun , Yuan Shixin
1994, 13(1).
Abstract:Metal-insulator-semiconductor (MIS) strueture were fabricated with p-type HgTe/CdTe superlattice. The MBE growth, device fabrication and measurement results are described. The results show that the wide CdTe barrier impedes the movements of minorities (electrons) to the interface and the low frequency capacity can't reach the insulator capacity at 77K in the strong inversion region, which is very similar to high frequency C-V curves of ordinary MIS structures.
1994, 13(1):1-8.
Abstract:The development of the growth technology of Si/Ge superlattices and the discovery of luminesceilce of porous silicon give rise to intense interest of investiration on .the Si-based low-dimensional structuxe materials. This paper reviews recent progress in this field, including:electronic states and optical properties of Si/Ge superlattices, transport properties of modulatinn doped Si/Ge.Si1-x. heterojunctions, and luminescence mechanism of porous silicon, etc.
Lu Wei , Ou Hapiang , Chen Minhui , Ma Chaohui , Liu Xingquan , Huang Xinliang , Mao Huixing , Jian Wei , Shen Xuechu
1994, 13(1):9-13.
Abstract:The practicality of GaAs/GaAlAs multiple quantum well infrared detector (MQWD) was studied experimentally by the infrared imaging demonstration. The competitiveness of the MQWD was directly demonstrated through the comparison of the iafrared imaging property from the infrared detector array made by MQWD and HgCdTe detector, respectively.
Huang Xingliang , Shen Wenzhong , Lu Wei , Mu Yaoming , Shen Xuechu
1994, 13(1):15-20.
Abstract:The photocurrent spectra of GaAs/AlGaAs multiple quantum wells infrared detectors under zero bias, small current and large bias were measured, respectively. The characteristics of multi-peaks and abnormal enhancement of the photocurrent spectra are discussed in comparison to the transition energy of theoretical calculation.
1994, 13(1):53-58.
Abstract:提出并生长了晶格匹配的HgSe/ZnTe超晶格系统,红外透射测试表明其禁带宽度落在红外波段的能量范围,将Zhu的关于ZnSe MBE生长模型加以推广,讨论了生长温度和束流条件对HgSe MBE生长的影响,并用分子束外延方法在160~180℃下生长了HgSe单晶薄膜。
Zhou Jie , Feng Songlin , Lu Liwu , Sun Jinglan
1994, 13(1):65-68.
Abstract:The electrical behavior of light modulator in GaAs/GaAlAs single quantum wen was investigated by using admittance spectroscopy technique. The physical phenomenon of delocalization in the electron and hole subbands of quantum well under electric field was observed.
1994, 13(1):69-72.
Abstract:Electron tunneling escape time from a biased quantum well was calculated with the wave-packet method. The result agrees with the experiment reasonably, but considerable discrepancy was found when the usual semiselassical model was applied By comparillg the two approaches, the authors pointed out that the wave function can penetrate some distance into the barriers, which was ignored by the usual semi-classicla model. And thus a modified model was given to simplify the calculation of tunneling escape time.
Xu Shijie , Liu Jian , Li Guohua , Zheng Houzhi , Jiang Desheng
1994, 13(1):77-80.
Abstract:Photoluminescence spectra at various temperatures of GaAs/AlGaAs asymmetric coupled double quantum wells pin structure are reported. Different temperature dependence of heavy-hole excitonic peaks intensity in narrow-and wide-well was observed.The results show that the thermionic emission of the electrons in the narrow-well results in more rapid decreasing of the luminescence intensity. The special temperature dependence of light-hole excitonic peaks intellsity in the wide-well and its mechanism were studied, too.
Editor in chief:Jun-Hao CHU
International standard number:ISSN 1001-9014
Unified domestic issue:CN 31-1577
Domestic postal code:4-335