A highpower and high beam quality 980nm bottomemitting verticalcavity surfaceemitting laser (VCSEL) with optimized pcontact aperture was reported. A numerical simulation of current density in a large aperture bottomemitting VCSEL with oxidation between the active region and the top ptype mirror was conducted. It is found that the simulated current density profiles of VCSEL are dependent on the oxide aperture diameter and the pcontact diameter. For a fixed oxide aperture diameter, the homogeneous current density of the VCSEL could be realized by optimizing the pcontact diameter. Thus, the edge mode in farfield patterns was suppressed. The farfield divergence angle from a 600 μm diameter VCSEL was suppressed from more than 30° to 15° and no strong sidelobe was observed in farfield pattern when the pcontact diameter decreased from 650 μm to 580 μm. There is a slight rise both in threshold current and optical output power due to the pcontact optimization. The VCSEL device produces the maximum optical output power of 2.01 W with lasing wavelength of 982.6nm by improving the device packaging method.
ZHANG Yan, NING Yong-Qiang, WANG Ye, LIU Guang-Yu, ZHANG Xing, WANG Zhen-Fu, SHI Jing-Jing, WANG Wei, ZHANG Li-Sen, QIN Li, SUN Yan-Fang, LIU Yun, WANG Li-Jun. HIGH POWER AND HIGN BEAM QUALITY 980nm BOTTOM-EMITTING VERTICAL-CAVITYSURFACE-EMITTING LASER[J]. Journal of Infrared and Millimeter Waves,2010,29(5):329~332Copy