In order to investigate the electrical properties of InAs/GaSb type-II superlattices， a lattice-matched AlAsSb electrical isolation layer was grown between the GaSb substrate and the InAs/GaSb type-II superlattice epitaxial material to suppress the conductive effect of the substrate. Temperature-dependent Hall measurements revealed that the unintentionally doped superlattice exhibited N-type conductivity. As the P-type doping concentration increased， a carrier compensation was observed， with the conductivity type reversal occurring at 95 K and 230 K. Below the transition temperatures， P-type conductivity was exhibited， while above the transition temperatures， the material exhibited N-type conductivity. The phenomenon was analyzed using the Fermi level model， and the results indicated that the transition temperature for the conductivity type change increased with increasing doping concentration.