Correlation between the whole small recess offset and electrical performance of InP-based HEMTs

doi:10.11972/j.issn.1001-9014.2025.01.006

Home > Archive>Volume 44, Issue 1, 2025 >40-45. DOI:10.11972/j.issn.1001-9014.2025.01.006

Correlation between the whole small recess offset and electrical performance of InP-based HEMTs
DOI:
                        10.11972/j.issn.1001-9014.2025.01.006
                    
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                        GONG Hang1,2GONG Hang
High-Frequency High-Voltage Device and Integrated Circuits Center， Institute of Microelectronics， Chinese Academy of Sciences， Beijing 100029， China;University of Chinese Academy of Sciences （UCAS）， Beijing 100049， China
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ZHOU Fu-Gui1,2ZHOU Fu-Gui
High-Frequency High-Voltage Device and Integrated Circuits Center， Institute of Microelectronics， Chinese Academy of Sciences， Beijing 100029， China;University of Chinese Academy of Sciences （UCAS）， Beijing 100049， China
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FENG Rui-Ze1,2FENG Rui-Ze
High-Frequency High-Voltage Device and Integrated Circuits Center， Institute of Microelectronics， Chinese Academy of Sciences， Beijing 100029， China;University of Chinese Academy of Sciences （UCAS）， Beijing 100049， China
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FENG Zhi-Yu1,2FENG Zhi-Yu
High-Frequency High-Voltage Device and Integrated Circuits Center， Institute of Microelectronics， Chinese Academy of Sciences， Beijing 100029， China;University of Chinese Academy of Sciences （UCAS）， Beijing 100049， China
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LIU Tong1LIU Tong
High-Frequency High-Voltage Device and Integrated Circuits Center， Institute of Microelectronics， Chinese Academy of Sciences， Beijing 100029， China
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SHI Jing-Yuan1,2SHI Jing-Yuan
High-Frequency High-Voltage Device and Integrated Circuits Center， Institute of Microelectronics， Chinese Academy of Sciences， Beijing 100029， China;University of Chinese Academy of Sciences （UCAS）， Beijing 100049， China
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SU Yong-Bo1,2SU Yong-Bo
High-Frequency High-Voltage Device and Integrated Circuits Center， Institute of Microelectronics， Chinese Academy of Sciences， Beijing 100029， China;University of Chinese Academy of Sciences （UCAS）， Beijing 100049， China
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JIN Zhi1,2JIN Zhi
High-Frequency High-Voltage Device and Integrated Circuits Center， Institute of Microelectronics， Chinese Academy of Sciences， Beijing 100029， China;University of Chinese Academy of Sciences （UCAS）， Beijing 100049， China
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Affiliation:1.High-Frequency High-Voltage Device and Integrated Circuits Center， Institute of Microelectronics， Chinese Academy of Sciences， Beijing 100029， China;2.University of Chinese Academy of Sciences (UCAS)， Beijing 100049， China
Clc Number:TN385
Fund Project:Supported by the Terahertz Multi User RF Transceiver System Development Project （Z211100004421012）.

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Abstract:

In this work， we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors （HEMTs）. L_g = 80 nm HEMTs are fabricated with a double-recessed gate process. We focus on their DC and RF responses， including the maximum transconductance （g_{m_max}）， ON-resistance （R_ON）， current-gain cutoff frequency （f_T）， and maximum oscillation frequency （f_max）. The devices have almost same R_ON. The g_{m_max} improves as the whole small recess moves toward the source. However， a small gate to source capacitance （C_gs） and a small drain output conductance （g_ds） lead to the largest f_T， although the whole small gate recess moves toward the drain leads to the smaller g_{m_max}. According to the small-signal modeling， the device with the whole small recess toward drain exhibits an excellent RF characteristics， such as f_T = 372 GHz and f_max= 394 GHz. This result is achieved by paying attention to adjust resistive and capacitive parasitics， which play a key role in high-frequency response.

Key words:InP high-electron-mobility transistor（InP HEMT）;InGaAs/InAlAs;DC/RF characteristic;small-signal modeling;double-recessed gate process

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GONG Hang, ZHOU Fu-Gui, FENG Rui-Ze, FENG Zhi-Yu, LIU Tong, SHI Jing-Yuan, SU Yong-Bo, JIN Zhi. Correlation between the whole small recess offset and electrical performance of InP-based HEMTs[J]. Journal of Infrared and Millimeter Waves,2025,44(1):40~45

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Received:March 05,2024
Revised:August 05,2024
Adopted:April 23,2024
Online: November 09,2024
Published:

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