Colloidal quantum dots (CQDs) are affected by the quantum confinement effect, which makes their bandgap tunable. This characteristic allows these materials to cover a broader infrared spectrum, providing a cost-effective alternative to traditional infrared detector technology. Recently, thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip, infrared detectors based on HgTe CQDs have shown great application prospects. However, facing the challenges of vertically stacked photovoltaic devices, such as barrier layer matching and film non-uniformity, most devices integrated with readout circuits still use a planar structure, which limits the efficiency of light absorption and the effective separation and collection of photo-generated carriers. Here, by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality, we have successfully fabricated a photovoltaic detector based on HgTe and ZnO QDs. At a working temperature of 80 K, this detector achieved a low dark current of 5.23×10-9 ^A cm-², a high rectification ratio, and satisfactory detection sensitivity. This work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits, demonstrating their great potential in the field of high-performance infrared detection.