75-110 GHz wideband frequency tripler chip based on planar schottky diode
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Affiliation:

1.The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang 050051, China;2.School of Microelectronics (School of Integrated Circuits), Nantong University, Nantong 226019, China;3.School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China

Clc Number:

TN315.3

Fund Project:

Supported by the National Natural Science Foundation of China (62034003)

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    Abstract:

    Based on the GaAs planar Schottky diode process, a W band wideband frequency tripler MMIC is designed with a reverse parallel diode pair. By combining the finite element method and equivalent circuit method, an accurate equivalent circuit model of the planar Schottky diode is built in the frequency range of 10-280 GHz. The nonlinear harmonic balance tool is utilized to achieve the optimal frequency tripler design in the W band. The measurement results show that the frequency multiplication loss is less than 15 dB under 17 dBm driving power, and the efficiency up to 6.7%. The chip size is 0.80 mm×0.65 mm×0.05 mm.

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CHEN Yan, MENG Fan-Zhong, XUE Hao-Dong, ZHANG Ao, GAO Jian-Jun.75-110 GHz wideband frequency tripler chip based on planar schottky diode[J]. Journal of Infrared and Millimeter Waves,2024,43(6):768~774

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History
  • Received:March 03,2024
  • Revised:November 06,2024
  • Adopted:April 17,2024
  • Online: November 06,2024
  • Published:
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