The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy

doi:10.11972/j.issn.1001-9014.XXXX.XX.001

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The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy
DOI:
                        10.11972/j.issn.1001-9014.XXXX.XX.001
                    
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Affiliation:1.School of Electronic Information and Artificial Intelligence， Shaanxi University of Science and Technology， Xi’an 710016， China;2.School of Mechanical and Electrical Engineering， Xi’an Traffic Engineering Institute， Xi’an 710300， China;3.School of Information Science and Engineering， Hebei University of Science and Technology， Shijiazhuang 050018， China.
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Fund Project:the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2023-JC-QN-0758), Shaanxi University of Science and Technology Research Launch Project (Grant No. 2020BJ-26). Doctoral Research Initializing Fund of Hebei University of Science and Technology, China (No. 1181476).

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Abstract:

This paper discusses the influence of Sb/In ratio on the transport properties and crystal quality of the 200 nm InAsxSb1-x thin film. The Sb content of InAsxSb1-x thin film in all sample was verified by HRXRD of the symmetrical 004 reflections and asymmetrical 115 reflections. The calculation results show that the Sb component is 0.6 in the InAsxSb1-x thin film grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3, which has the highest electron mobility (28560 cm2/V·s) at 300 K. At the same time, the influence of V/III ratio on the transport properties and crystal quality of Al0.2In0.8Sb/InAsxSb1-x quantum well heterostructures also has been investigated. As a result, the Al0.2In0.8Sb/InAs0.4Sb0.6 quantum well heterostructure with a channel thickness of 30 nm grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3 has a maximum electron mobility of 28300 cm2/V·s and a minimum RMS roughness of 0.68 nm. Through optimizing the growth conditions, our samples have higher electron mobility and smoother surface morphology.

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Received:January 20,2024
Revised:March 07,2024
Adopted:March 12,2024
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